IRG4BC30参数引脚图批发采购价格英飞凌-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

IRG4BC30价格

参考价格：￥9.8960

型号：IRG4BC30FD1PBF 品牌：INTERNATIONAL 备注：这里有IRG4BC30多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4BC30批发/采购报价，IRG4BC30行情走势销售排行榜，IRG4BC30报价。

型号	功能描述	生产厂家企业	LOGO
IRG4BC30	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off	IRF	IRF
IRG4BC30	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous	IRF	IRF
IRG4BC30	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-s	IRF	IRF
IRG4BC30	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)	Infineon 英飞凌	Infineon
IRG4BC30F	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off	IRF	IRF
IRG4BC30FD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-s	IRF	IRF
IRG4BC30FD	IGBT DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC	ISC 无锡固电	ISC
IRG4BC30FD1	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE	IRF	IRF
IRG4BC30FD1PBF	Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with Hyperfast FRED diodes for ultra lo	IRF	IRF
IRG4BC30FDPBF	Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A ) Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	IRF	IRF
IRG4BC30FD-S	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra l	IRF	IRF
IRG4BC30FD-SPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter . parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra	IRF	IRF
IRG4BC30FPBF	Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free Benefits • Generatio	IRF	IRF
IRG4BC30K	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous	IRF	IRF
IRG4BC30KD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations	IRF	IRF
IRG4BC30KDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packag	IRF	IRF
IRG4BC30KDS	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul	IRF	IRF
IRG4BC30KD-S	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul	IRF	IRF
IRG4BC30KD-SPBF	INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul	IRF	IRF
IRG4BC30KD-STRR	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul	IRF	IRF
IRG4BC30KPBF	INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT	IRF	IRF
IRG4BC30KS	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous	IRF	IRF
IRG4BC30K-S	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous	IRF	IRF
IRG4BC30K-SPBF	INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control tsc = 10 μs, @360V VCE(start), TJ = 125 °C VGE = 15V • Conbines low conduction losses with high switching speed • Latest generation design provides t	IRF	IRF
IRG4BC30S	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30SS	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30S-S	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30S-S	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30SS_04	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30S-S_04	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30S-SPBF	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30U	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Gener	IRF	IRF
IRG4BC30UD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-	IRF	IRF
IRG4BC30UDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-	IRF	IRF
IRG4BC30UPBF	UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free Bene	IRF	IRF
IRG4BC30US	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard D2Pak package Benefits • Generati	IRF	IRF
IRG4BC30U-S	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard D2Pak package Benefits • Generati	IRF	IRF
IRG4BC30U-SPBF	INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard D2Pak package • Lead-Free Benefit	IRF	IRF
IRG4BC30W	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) Features •Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications •Industry-benchmark switching losses improve efficiency of all power supply topologies •50 reduction of Eoff parameter •Low IGBT conduction losses •Latest-generation IGBT design	IRF	IRF
IRG4BC30W	INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design	Infineon 英飞凌	Infineon
IRG4BC30WS	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT de	IRF	IRF
IRG4BC30W-S	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT de	IRF	IRF
IRG4BC30W-SPBF	INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT	IRF	IRF
IRG4BC30F	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4BC30F	INSULATED GATE BIPOLAR TRANSISTOR 文件：177.75 Kbytes Page：9 Pages	IRF	IRF
IRG4BC30FD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4BC30FD	600V Fast 1-8 kHz Copack IGBT in a TO-220AB package	Infineon 英飞凌	Infineon
IRG4BC30FD1	封装/外壳：TO-220-3 包装：卷带（TR）描述：IGBT 600V 31A 100W TO220AB 分立半导体产品晶体管 - UGBT、MOSFET - 单	Infineon 英飞凌	Infineon
IRG4BC30FD1	600V 快速 1-5 kHz 硬开关Copack IGBT，采用 TO-220AB 封装， >20kHz 谐振模式	Infineon 英飞凌	Infineon
IRG4BC30FD1PBF	封装/外壳：TO-220-3 包装：管件描述：IGBT 600V 31A 100W TO220AB 分立半导体产品晶体管 - UGBT、MOSFET - 单	Infineon 英飞凌	Infineon
IRG4BC30FD1PBF	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：415.83 Kbytes Page：10 Pages	IRF	IRF
IRG4BC30FD1PBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：415.83 Kbytes Page：10 Pages	IRF	IRF
IRG4BC30FDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：397.06 Kbytes Page：10 Pages	IRF	IRF
IRG4BC30FDPBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：397.06 Kbytes Page：10 Pages	IRF	IRF
IRG4BC30FD-SPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：1.21922 Mbytes Page：11 Pages	IRF	IRF
IRG4BC30FD-SPBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：1.21922 Mbytes Page：11 Pages	IRF	IRF
IRG4BC30FPBF	INSULATED GATE BIPOLAR TRANSISTOR 文件：311 Kbytes Page：8 Pages	IRF	IRF
IRG4BC30FPBF_15	INSULATED GATE BIPOLAR TRANSISTOR 文件：311 Kbytes Page：8 Pages	IRF	IRF
IRG4BC30F-STRLP	INSULATED GATE BIPOLAR TRANSISTOR 文件：177.75 Kbytes Page：9 Pages	IRF	IRF
IRG4BC30K	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF

IRG4BC30产品属性

类型
描述
型号
IRG4BC30
制造商
IRF
制造商全称
International Rectifier
功能描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

IRG4BC30供应商更多...

更新时间：2025-11-20 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	IRG4BC30KDPBF	Infineon(英飞凌)	24+	TO-220	942	原厂订货渠道,支持BOM配单一站式服务	询价
上海意淼电子科技有限公司	IRG4BC30F	MOT	23+	DQFP140	6500	全新原装假一赔十	询价
深圳市纳艾斯科技有限公司	IRG4BC30	IR	24+		80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市明嘉莱科技有限公司	IRG4BC30FD	IR	24+	TO 220	161546	明嘉莱只做原装正品现货	询价
中天科工半导体（深圳）有限公司	IRG4BC30UDPBF	INFINEON/英飞凌	25+	TO-220	32360	INFINEON/英飞凌全新特价IRG4BC30UDPBF即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	IRG4BC30FPBF	IR	2450+	TO-220	9850	只做原装正品现货或订货假一赔十!	询价
贸泽芯城（深圳）电子科技有限公司	IRG4BC30	IR	23+		10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市富利微电子科技有限公司	IRG4BC30KDPBF	IR	24+	TO-220	20540	保证进口原装现货假一赔十	询价
深圳市得捷芯城科技有限公司	IRG4BC30KD	IR(国际整流器)	24+	N/A	7078	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市拓亿芯电子有限公司	IRG4BC30K-STRR	IR	25+	TO-263	15000	代理原装现货,价格优势	询价

IRG4BC30芯片相关品牌

IRG4BC30规格书下载地址

IRG4BC30参数引脚图相关

IRG4BC30数据表相关新闻

IRFZ44NSTRLPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-24
IRG4PC40KPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-23
IRFZ44NPBF原装现货
IRFZ44NPBF原装正品
2021-8-10
IRG4PC50WPBF
属性参数值商品目录 IGBT管集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
2020-10-27
IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装用芯服务；
2020-7-17
IRFZ44NPBF选拓亿芯电子，国际电子元器件供应商
元器件优质供应
2019-11-1

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

IRG4BC30价格

IRG4BC30产品属性

IRG4BC30供应商更多...

IRG4BC30芯片相关品牌

IRG4BC30规格书下载地址

IRG4BC30参数引脚图相关

IRG4BC30数据表相关新闻

IRFZ44NSTRLPBF 原装正品.仓库现货

IRG4PC40KPBF 原装正品.仓库现货

IRFZ44NPBF原装现货

IRG4PC50WPBF

IRGB15B60KDPBF IR全新正品现货

IRFZ44NPBF选拓亿芯电子，国际电子元器件供应商

DdatasheetPDF页码索引