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IRG4BC30价格
参考价格：￥9.8960
型号：IRG4BC30FD1PBF 品牌：INTERNATIONAL 备注：这里有IRG4BC30多少钱，2024年最近7天走势，今日出价，今日竞价，IRG4BC30批发/采购报价，IRG4BC30行情走势销售排行榜，IRG4BC30报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC30 | INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Generation4IGBTsoff | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRG4BC30 | INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
IRG4BC30 | INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-s | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Generation4IGBTsoff | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-s | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
FastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHyperfastFREDdiodesforultralo | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
FastCoPack1GBT(VCES=600V,VCE(on)typ.=1.59V,VGE=15V,IC=17A) FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultral | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE Features •Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. •IGBTco-packagedwithHyperfastFREDdiodesforultra | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
FastSpeedIGBTINSULATEDGATEBIPOLARTRANSISTOR Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Generatio | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEShortCircuitRatedUltraFast1GBT Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •tighterparameterdistributionandhigherefficiencythan previousgenerations •IGBTco-packag | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSUKATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations •IGBTco-packagedwithHEXFREDTMul | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR ShortCircuitRatedUltraFastIGBT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORShortCiruitRatedUltraFastIGBT INSULATEDGATEBIPOLARTRANSISTORShortCiruitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol tsc=10μs,@360VVCE(start),TJ=125°C VGE=15V •Conbineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidest | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A) Features •Standard:optimizedforminimumsaturation voltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A) Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A) Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A) Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A) Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.4V,@Vge=15V,Ic=18A) Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT Features •Standard:optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features •UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage Benefits •Gener | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEUltraFastCoPackIGBT Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
UltraFastSpeedIGBT Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-220ABpackage •Lead-Free Bene | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardD2Pakpackage Benefits •Generati | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A) Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardD2Pakpackage Benefits •Generati | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardD2Pakpackage •Lead-Free Benefit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesign | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.10V,@Vge=15V,Ic=12A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.10V,@Vge=15V,Ic=12A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTde | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR Features •DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications •Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
FitRate/EquivalentDeviceHours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR 文件：177.75 Kbytes Page：9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
FitRate/EquivalentDeviceHours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 31A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 31A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE 文件：415.83 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE 文件：415.83 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件：397.06 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件：397.06 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE 文件：1.21922 Mbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE 文件：1.21922 Mbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR 文件：311 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR 文件：311 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR 文件：177.75 Kbytes Page：9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
FitRate/EquivalentDeviceHours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件：347.44 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件：347.44 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFRRECOVERYDIODE 文件：376.96 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFRRECOVERYDIODE 文件：376.96 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) 文件：263.29 Kbytes Page：9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
IRG4BC30产品属性
- 类型
描述
- 型号
IRG4BC30
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
IR |
10+ |
TO-263 |
550 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
TO 220 |
161546 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
21+23+ |
TO-220 |
6499 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
IR |
21+ |
TO-263 |
6400 |
原厂订货价格优势,可开13%的增值税票 |
|||
IR/International Rectifier/国 |
21+ |
TO-263 |
550 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
23+ |
TO-220 |
35890 |
||||
IR |
2020+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
22+ |
TO-220 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
英飞凌 |
新批次 |
N/A |
1500 |
IRG4BC30芯片相关品牌
IRG4BC30规格书下载地址
IRG4BC30参数引脚图相关
- l101
- l100
- ku波段
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- ks20
- km710
- ka5q1265rf
- k9f1208
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- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG4BC40UPBF
- IRG4BC40SPBF
- IRG4BC40KPBF
- IRG4BC30W-STRLP
- IRG4BC30W-SPBF
- IRG4BC30WPBF
- IRG4BC30UPBF
- IRG4BC30UDPBF
- IRG4BC30S-STRLP
- IRG4BC30SPBF
- IRG4BC30KPBF
- IRG4BC30KDSTRLP
- IRG4BC30KD-SPBF
- IRG4BC30KDPBF
- IRG4BC30F-SPBF
- IRG4BC30FPBF
- IRG4BC30FDSTRRP
- IRG4BC30FD-SPBF
- IRG4BC30FDPBF
- IRG4BC30FD1PBF
- IRG4BC20UPBF
- IRG4BC20UDSTRRP
- IRG4BC20UD-SPBF
- IRG4BC20UDPBF
- IRG4BC20SPBF
- IRG4BC20SD-SPBF
- IRG4BC20SDPBF
- IRG4BC20MDPBF
- IRG4BC20KDSTRLP
- IRG4BC20KD-SPBF
- IRG4BC20KDPBF
- IRG4BC20FPBF
- IRG4BC20FDPBF
- IRG4BC15UD-SPBF
- IRG4BC15UDPBF
- IRG4BC15UD-LPBF
- IRG4BC10UDPBF
- IRG4BC10KPBF
- IRG4BC10KDPBF
- IRFZ48ZSPBF
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4BC30数据表相关新闻
IRFZ44NSTRLPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-24IRG4PC40KPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-23IRFZ44NPBF原装现货
IRFZ44NPBF原装正品
2021-8-10IRG4PC50WPBF
属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装用芯服务；
2020-7-17IRFZ44NPBF选拓亿芯电子，国际电子元器件供应商
元器件优质供应
2019-11-1
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