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IRG4BC30价格

参考价格：￥9.8960

型号：IRG4BC30FD1PBF 品牌：INTERNATIONAL 备注：这里有IRG4BC30多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4BC30批发/采购报价，IRG4BC30行情走势销售排行榜，IRG4BC30报价。

型号	功能描述	生产厂家企业	LOGO
IRG4BC30	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous	IRF	IRF
IRG4BC30	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off	IRF	IRF
IRG4BC30	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-s	IRF	IRF
IRG4BC30	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)	INFINEON 英飞凌	INFINEON
IRG4BC30F	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off	IRF	IRF
IRG4BC30FD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-s	IRF	IRF
IRG4BC30FD	600V Fast 1-8 kHz Copack IGBT in a TO-220AB package 600V IGBT 与快速 1-8 kHz 软恢复二极管联合封装到 TO-220AB 封装中。 • 对中等工作频率进行了优化\n• 参数分布更紧凑，效率更高\n• 与 HEXFREDTM 超快、超软恢复反并联二极管联合封装的 IGBT，在桥配置中使用\n• 行业标准 TO-220AB 封装\n• 无铅\n\n优势:\n• IGBT 提供可实现的出色效率\n• 针对特定应用条件进行过优化的 IGBT\n• HEXFRED 二极管与 IGBT 并用优化。恢复特性最小化，对缓冲的要求更少甚至不需要。\n• 旨在“直接替代”同等行业内标准的第三代 IR IGBT;	INFINEON 英飞凌	INFINEON
IRG4BC30FD	IGBT DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC	ISC 无锡固电	ISC
IRG4BC30FD1	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE	IRF	IRF
IRG4BC30FD1PBF	Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with Hyperfast FRED diodes for ultra lo	IRF	IRF
IRG4BC30FDPBF	Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A ) Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	IRF	IRF
IRG4BC30FD-S	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra l	IRF	IRF
IRG4BC30FD-SPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter . parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra	IRF	IRF
IRG4BC30FPBF	Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free Benefits • Generatio	IRF	IRF
IRG4BC30K	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous	IRF	IRF
IRG4BC30KD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations	IRF	IRF
IRG4BC30KDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packag	IRF	IRF
IRG4BC30KDS	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul	IRF	IRF
IRG4BC30KD-S	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul	IRF	IRF
IRG4BC30KD-SPBF	INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul	IRF	IRF
IRG4BC30KD-STRR	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul	IRF	IRF
IRG4BC30KPBF	INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT	IRF	IRF
IRG4BC30KS	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous	IRF	IRF
IRG4BC30K-S	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous	IRF	IRF
IRG4BC30K-SPBF	INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control tsc = 10 μs, @360V VCE(start), TJ = 125 °C VGE = 15V • Conbines low conduction losses with high switching speed • Latest generation design provides t	IRF	IRF
IRG4BC30S	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30SS	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30S-S	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30S-S	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30SS_04	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30S-S_04	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30S-SPBF	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: optimized for minimum saturation voltage and low operating frequencies (	IRF	IRF
IRG4BC30U	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Gener	IRF	IRF
IRG4BC30UD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-	IRF	IRF
IRG4BC30UDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-	IRF	IRF
IRG4BC30UPBF	UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free Bene	IRF	IRF
IRG4BC30US	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard D2Pak package Benefits • Generati	IRF	IRF
IRG4BC30U-S	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard D2Pak package Benefits • Generati	IRF	IRF
IRG4BC30U-SPBF	INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard D2Pak package • Lead-Free Benefit	IRF	IRF
IRG4BC30W	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) Features •Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications •Industry-benchmark switching losses improve efficiency of all power supply topologies •50 reduction of Eoff parameter •Low IGBT conduction losses •Latest-generation IGBT design	IRF	IRF
IRG4BC30W	INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design	INFINEON 英飞凌	INFINEON
IRG4BC30WS	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT de	IRF	IRF
IRG4BC30W-S	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A) Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT de	IRF	IRF
IRG4BC30W-SPBF	INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT	IRF	IRF
IRG4BC30F	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4BC30F	INSULATED GATE BIPOLAR TRANSISTOR 文件：177.75 Kbytes Page：9 Pages	IRF	IRF
IRG4BC30FD	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF
IRG4BC30FD1	封装/外壳：TO-220-3 包装：卷带（TR）描述：IGBT 600V 31A 100W TO220AB 分立半导体产品晶体管 - UGBT、MOSFET - 单	INFINEON 英飞凌	INFINEON
IRG4BC30FD1	600V 快速 1-5 kHz 硬开关Copack IGBT，采用 TO-220AB 封装， >20kHz 谐振模式	INFINEON 英飞凌	INFINEON
IRG4BC30FD1PBF	封装/外壳：TO-220-3 包装：管件描述：IGBT 600V 31A 100W TO220AB 分立半导体产品晶体管 - UGBT、MOSFET - 单	INFINEON 英飞凌	INFINEON
IRG4BC30FD1PBF	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：415.83 Kbytes Page：10 Pages	IRF	IRF
IRG4BC30FD1PBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：415.83 Kbytes Page：10 Pages	IRF	IRF
IRG4BC30FDPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：397.06 Kbytes Page：10 Pages	IRF	IRF
IRG4BC30FDPBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：397.06 Kbytes Page：10 Pages	IRF	IRF
IRG4BC30FD-SPBF	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：1.21922 Mbytes Page：11 Pages	IRF	IRF
IRG4BC30FD-SPBF_15	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：1.21922 Mbytes Page：11 Pages	IRF	IRF
IRG4BC30FPBF	INSULATED GATE BIPOLAR TRANSISTOR 文件：311 Kbytes Page：8 Pages	IRF	IRF
IRG4BC30FPBF_15	INSULATED GATE BIPOLAR TRANSISTOR 文件：311 Kbytes Page：8 Pages	IRF	IRF
IRG4BC30F-STRLP	INSULATED GATE BIPOLAR TRANSISTOR 文件：177.75 Kbytes Page：9 Pages	IRF	IRF
IRG4BC30K	Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages	IRF	IRF

IRG4BC30产品属性

类型
描述
Technology ：
IGBT Gen 4
Switching Frequency min max：
8.0kHz 30.0kHz
Package ：
TO-220
Voltage Class max：
600.0V
IC(@100°) max：
17.0A
IC(@25°) max：
31.0A
ICpuls max：
124.0A
Ptot max：
100.0W
VCE(sat) ：
1.59V
Eon ：
0.23mJ
Eoff(Hard Switching) ：
1.18mJ
td(on) ：
20.0ns
tr ：
16.0ns
td(off) ：
290.0ns
tf ：
350.0ns
QGate ：
67.0nC
Ets (max)：
1.41mJ (2.0mJ)
Switching Frequency ：
Gen 4 8-30 kHz
VCE max：
600.0V

IRG4BC30供应商更多...

更新时间：2026-5-20 11:52:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市富利微电子科技有限公司	IRG4BC30KDPBF	IR	25+	TO-220	20540	保证进口原装现货假一赔十	询价
深圳市华来深电子有限公司	IRG1330U	IR	23+	TO220	8560	受权代理!全新原装现货特价热卖!	询价
深圳市高捷芯城科技有限公司	IRG4BC30KDPBF	Infineon(英飞凌)	24+	TO-220	942	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市美思瑞电子科技有限公司	IRG1330U	IR	22+	TO220	12245	现货,原厂原装假一罚十!	询价
深圳市科恒伟业电子有限公司	IRG4BC30FPBF	IR	2450+	TO-220	9850	只做原装正品现货或订货假一赔十!	询价
深圳市拓亿芯电子有限公司	IRG4BC30K-STRR	IR	25+	TO-263	15000	代理原装现货,价格优势	询价
贸泽芯城（深圳）电子科技有限公司	IRG10CU	IR	23+	SOP-8	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市明嘉莱科技有限公司	IRG4BC30KDSTRRP	INFINEON/英飞凌	15+	明嘉莱只做原装正品现货	2510000	TO-263	询价
深圳市安富世纪电子有限公司	IRG1020VH	IR	23+		8000	只做原装现货	询价
深圳市莱克讯科技有限公司	IRG1330U	原装	最新	TO220	8900	公司原装现货特价长期供货欢迎来电咨询	询价

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DdatasheetPDF页码索引

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IRG4BC30价格

IRG4BC30产品属性

IRG4BC30供应商更多...

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DdatasheetPDF页码索引