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IRG4BC30KD价格
参考价格：￥5.0478
型号：IRG4BC30KDPBF 品牌：INTERNATIONAL 备注：这里有IRG4BC30KD多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4BC30KD批发/采购报价，IRG4BC30KD行情走势销售排行榜，IRG4BC30KD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC30KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations | IRF |   | |
IRG4BC30KD | 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packag | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul | IRF | | ||
INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：347.44 Kbytes Page：10 Pages | IRF | | ||
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 28A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：347.44 Kbytes Page：10 Pages | IRF | | ||
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE 文件：376.96 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE 文件：376.96 Kbytes Page：11 Pages | IRF | | ||
IGBT DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC | ISC 无锡固电 | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：307.07 Kbytes Page：13 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：307.07 Kbytes Page：13 Pages | IRF | |
IRG4BC30KD产品属性
- 类型
描述
- 型号
IRG4BC30KD
- 制造商
International Rectifier
- 功能描述
IGBT TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
11+ |
TO-263 |
13 |
优势 |
|||
INFINEON/英飞凌 |
2407+ |
30098 |
全新原装!仓库现货,大胆开价! |
||||
IR(国际整流器) |
24+ |
N/A |
7078 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR |
24+ |
TO-263 |
6400 |
只做原装假一赔十 |
|||
IR |
24+ |
TO-220AB |
27500 |
原装正品,价格最低! |
|||
INFINEON |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
|||
INFINEON/英飞凌 |
2023+ |
TO-263 |
6400 |
原厂全新正品旗舰店优势现货 |
|||
INFINEON |
23+ |
TO-263 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
Infineon/英飞凌 |
23+ |
TO-220(TO-220-3) |
12700 |
买原装认准中赛美 |
|||
IR |
25+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
IRG4BC30KD芯片相关品牌
IRG4BC30KD规格书下载地址
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DdatasheetPDF页码索引
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