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IRG4BC30FD价格
参考价格：￥9.8960
型号：IRG4BC30FD1PBF 品牌：INTERNATIONAL 备注：这里有IRG4BC30FD多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4BC30FD批发/采购报价，IRG4BC30FD行情走势销售排行榜，IRG4BC30FD报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC30FD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-s | IRF International Rectifier |  |   |
IRG4BC30FD | Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE | IRF International Rectifier | | | |
Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with Hyperfast FRED diodes for ultra lo | IRF International Rectifier | | | |
Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A ) Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra l | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter . parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：415.83 Kbytes Page：10 Pages | IRF International Rectifier | | | |
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 31A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：415.83 Kbytes Page：10 Pages | IRF International Rectifier | | | |
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 31A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：397.06 Kbytes Page：10 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：397.06 Kbytes Page：10 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：1.21922 Mbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：1.21922 Mbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC | IRF International Rectifier | | | |
IGBT DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：307.07 Kbytes Page：13 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：307.07 Kbytes Page：13 Pages | IRF International Rectifier | | |
IRG4BC30FD产品属性
- 类型
描述
- 型号
IRG4BC30FD
- 制造商
International Rectifier
- 功能描述
IGBT TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
7000 |
||||
IR |
25+ |
TO220 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
Infineon(英飞凌) |
24+ |
D2PAK |
1471 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
INFINEON/英飞凌 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
|||
IR |
24+ |
TO 220 |
161546 |
明嘉莱只做原装正品现货 |
|||
IR |
24+ |
原厂封装 |
400 |
原装现货假一罚十 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR/VIS |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
IRG4BC30FD芯片相关品牌
IRG4BC30FD规格书下载地址
IRG4BC30FD参数引脚图相关
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- IRG4BC30W-STRLP
- IRG4BC30W-SPBF
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- IRG4BC30FD1PBF
- IRG4BC20UPBF
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- IRG4BC15UD-SPBF
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- IRFZ48ZSPBF
- IRFZ48Z
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- IRFZ44E
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DdatasheetPDF页码索引
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