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位置：首页 > IC中文资料第896页 > IRG4BC30FD

IRG4BC30FD价格

参考价格：￥9.8960

型号：IRG4BC30FD1PBF 品牌：INTERNATIONAL 备注：这里有IRG4BC30FD多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4BC30FD批发/采购报价，IRG4BC30FD行情走势销售排行榜，IRG4BC30FD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4BC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-s

IRF

IRG4BC30FD

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

IRF

IRG4BC30FD

600V Fast 1-8 kHz Copack IGBT in a TO-220AB package

Infineon

英飞凌

IRG4BC30FD1

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

IRF

IRG4BC30FD1PBF

Fast CoPack IGBT

Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with Hyperfast FRED diodes for ultra lo

IRF

IRG4BC30FDPBF

Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )

Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRF

IRG4BC30FD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra l

IRF

IRG4BC30FD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter . parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra

IRF

IRG4BC30FD1

600V 快速 1-5 kHz 硬开关Copack IGBT，采用 TO-220AB 封装， >20kHz 谐振模式

Infineon

英飞凌

IRG4BC30FD1PBF

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 31A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4BC30FD1PBF

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

文件：415.83 Kbytes Page：10 Pages

IRF

IRG4BC30FD1PBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

文件：415.83 Kbytes Page：10 Pages

IRF

IRG4BC30FDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：397.06 Kbytes Page：10 Pages

IRF

IRG4BC30FDPBF

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 31A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4BC30FDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：397.06 Kbytes Page：10 Pages

IRF

IRG4BC30FD-S

600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package

Infineon

英飞凌

IRG4BC30FD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

文件：1.21922 Mbytes Page：11 Pages

IRF

IRG4BC30FD-SPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

文件：1.21922 Mbytes Page：11 Pages

IRF

AUIRG4BC30U-S

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

IRF

AUIRG4BC30U-S

IGBT

DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC

ISC

无锡固电

AUIRG4BC30U-SL

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

IRF

AUIRG4BC30S-S

INSULATED GATE BIPOLAR TRANSISTOR

文件：307.07 Kbytes Page：13 Pages

IRF

AUIRG4BC30S-SL

INSULATED GATE BIPOLAR TRANSISTOR

文件：307.07 Kbytes Page：13 Pages

IRF

IRG4BC30FD产品属性

  • 类型

    描述

  • 型号

    IRG4BC30FD

  • 制造商

    International Rectifier

  • 功能描述

    IGBT TO-220

IRG4BC30FD供应商更多...

更新时间：2025-10-5 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
IRG4BC30FDSTRRP
Infineon(英飞凌)
24+
D2PAK
1471
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市得捷芯城科技有限公司
IRG4BC30FD
IR/VIS
24+
NA/
100
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市纳艾斯科技有限公司
IRG4BC30FD
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市明嘉莱科技有限公司
IRG4BC30FD
IR
24+
TO 220
161546
明嘉莱只做原装正品现货
询价
深圳市恒达亿科技有限公司
IRG4BC30FD
IR
25+
TO-220
4500
全新原装、诚信经营、公司现货销售
询价
深圳市坤融电子科技有限公司
IRG4BC30FD-SPBF
INFINEON/英飞凌
24+
TO-263
200
只做原厂渠道 可追溯货源
询价
深圳市一线半导体有限公司
IRG4BC30FD
IR
24+
TO-220
3165
询价
深圳市向鸿伟业电子有限公司
IRG4BC30FDSTRRP
IR
24+
TO-263
941
原装正品/假一罚十/支持样品/可开发票
询价
易创佳业科技（深圳）有限公司
IRG4BC30FD1
Infineon Technologies
23+
TO220AB
9000
原装正品，支持实单
询价
天津市博通航睿技术有限公司
IRG4BC30FD
IR
23+
TO-220
7000
询价

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