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IRG4BC30F价格
参考价格：￥9.8960
型号：IRG4BC30FD1PBF 品牌：INTERNATIONAL 备注：这里有IRG4BC30F多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4BC30F批发/采购报价，IRG4BC30F行情走势销售排行榜，IRG4BC30F报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC30F | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off | IRF International Rectifier |  |   |
IRG4BC30F | Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | |
IRG4BC30F | INSULATED GATE BIPOLAR TRANSISTOR 文件：177.75 Kbytes Page：9 Pages | IRF International Rectifier | | |
IRG4BC30F | 封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT 600V 31A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-s | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE | IRF International Rectifier | | | |
Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with Hyperfast FRED diodes for ultra lo | IRF International Rectifier | | | |
Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A ) Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra l | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter . parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra | IRF International Rectifier | | | |
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free Benefits • Generatio | IRF International Rectifier | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF International Rectifier | | | |
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 31A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：415.83 Kbytes Page：10 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：415.83 Kbytes Page：10 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：397.06 Kbytes Page：10 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：397.06 Kbytes Page：10 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：1.21922 Mbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE 文件：1.21922 Mbytes Page：11 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：311 Kbytes Page：8 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：311 Kbytes Page：8 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：177.75 Kbytes Page：9 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC | IRF International Rectifier | | | |
IGBT DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：307.07 Kbytes Page：13 Pages | IRF International Rectifier | | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：307.07 Kbytes Page：13 Pages | IRF International Rectifier | | |
IRG4BC30F产品属性
- 类型
描述
- 型号
IRG4BC30F
- 功能描述
IGBT FAST 600V 31A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
941 |
原装正品/假一罚十/支持样品/可开发票 |
|||
IR |
22+ |
TO-220 |
12245 |
现货,原厂原装假一罚十! |
|||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
Infineon Technologies |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌/IR |
24+ |
TO-220 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
IR |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Infineon(英飞凌) |
24+ |
D2PAK |
1471 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
04+ |
TO-220AB |
1000 |
全新原装 绝对有货 |
IRG4BC30F芯片相关品牌
IRG4BC30F规格书下载地址
IRG4BC30F参数引脚图相关
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- jumper
- jtag接口
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- IRG4BC40UPBF
- IRG4BC40SPBF
- IRG4BC40KPBF
- IRG4BC30W-STRLP
- IRG4BC30W-SPBF
- IRG4BC30WPBF
- IRG4BC30UPBF
- IRG4BC30UDPBF
- IRG4BC30S-STRLP
- IRG4BC30SPBF
- IRG4BC30KPBF
- IRG4BC30KDSTRLP
- IRG4BC30KD-SPBF
- IRG4BC30KDPBF
- IRG4BC30F-SPBF
- IRG4BC30FPBF
- IRG4BC30FDSTRRP
- IRG4BC30FD-SPBF
- IRG4BC30FDPBF
- IRG4BC30FD1PBF
- IRG4BC20UPBF
- IRG4BC20UDSTRRP
- IRG4BC20UD-SPBF
- IRG4BC20UDPBF
- IRG4BC20SPBF
- IRG4BC20SD-SPBF
- IRG4BC20SDPBF
- IRG4BC20MDPBF
- IRG4BC20KDSTRLP
- IRG4BC20KD-SPBF
- IRG4BC20KDPBF
- IRG4BC20FPBF
- IRG4BC20FDPBF
- IRG4BC15UD-SPBF
- IRG4BC15UDPBF
- IRG4BC15UD-LPBF
- IRG4BC10UDPBF
- IRG4BC10KPBF
- IRG4BC10KDPBF
- IRFZ48ZSPBF
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4BC30F数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
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元器件优质供应
2019-11-1
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