IRG4BC30S价格

参考价格:¥6.1518

型号:IRG4BC30SPBF 品牌:International 备注:这里有IRG4BC30S多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4BC30S批发/采购报价,IRG4BC30S行情走势销售排行榜,IRG4BC30S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4BC30S

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

IRG4BC30S

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

IRG4BC30S

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 34A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4BC30S

600V DC-1 kHz(标准)分立 IGBT,采用 TO-220AB 封装

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:288.11 Kbytes Page:8 Pages

IRF

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 34A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

文件:263.29 Kbytes Page:9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:288.11 Kbytes Page:8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Infineon

英飞凌

IGBT

DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC

ISC

无锡固电

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:307.07 Kbytes Page:13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:307.07 Kbytes Page:13 Pages

IRF

IRG4BC30S产品属性

  • 类型

    描述

  • 型号

    IRG4BC30S

  • 功能描述

    IGBT STD 600V 34A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> IGBT - 单路

  • 系列

    -

  • 标准包装

    30

  • 系列

    GenX3™ IGBT

  • 类型

    PT 电压 -

  • 集电极发射极击穿(最大)

    1200V Vge,

  • Ic时的最大Vce(开)

    3V @ 15V,100A 电流 -

  • 集电极(Ic)(最大)

    200A 功率 -

  • 最大

    830W

  • 输入类型

    标准

  • 安装类型

    通孔

  • 封装/外壳

    TO-247-3

  • 供应商设备封装

    PLUS247?-3

  • 包装

    管件

更新时间:2025-11-21 11:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-263
50000
全新原装正品现货,支持订货
INFINEON/英飞凌
25+
TO-220
15000
原装现货假一赔十
IR
24+
TO-220-3
607
IR
24+
TO-220AB
27500
原装正品,价格最低!
INTERNATIONA
05+
原厂原装
4266
只做全新原装真实现货供应
IR
24+
TO-220
45000
IR代理原包原盒,假一罚十。最低价
Infineon Technologies
22+
TO220AB
9000
原厂渠道,现货配单
Infineon Technologies
25+
TO-220-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IR
24+
TO-263
5000
全现原装公司现货
IR
23+24
TO-220
59630
主营原装MOS,二三级管,肖特基,功率场效应管

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