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IRG4BC30K价格
参考价格：￥5.0478
型号：IRG4BC30KDPBF 品牌：INTERNATIONAL 备注：这里有IRG4BC30K多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4BC30K批发/采购报价，IRG4BC30K行情走势销售排行榜，IRG4BC30K报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC30K | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous | IRF |   | |
IRG4BC30K | Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRF | | |
IRG4BC30K | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 28A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
IRG4BC30K | 600V 超快 8-25 kHz 分立 IGBT，采用 TO-220AB 封装 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packag | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul | IRF | | ||
INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control tsc = 10 μs, @360V VCE(start), TJ = 125 °C VGE = 15V • Conbines low conduction losses with high switching speed • Latest generation design provides t | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：347.44 Kbytes Page：10 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：347.44 Kbytes Page：10 Pages | IRF | | ||
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE 文件：376.96 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE 文件：376.96 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 文件：263.29 Kbytes Page：9 Pages | IRF | | ||
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 28A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 文件：263.29 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 文件：263.29 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 文件：263.29 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT | Infineon 英飞凌 | | ||
IGBT DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC | ISC 无锡固电 | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：307.07 Kbytes Page：13 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：307.07 Kbytes Page：13 Pages | IRF | |
IRG4BC30K产品属性
- 类型
描述
- 型号
IRG4BC30K
- 功能描述
IGBT UFAST 600V 28A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
IR |
23+ |
TO-263 |
20000 |
全新原装假一赔十 |
|||
IR |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
24+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
25+ |
TO-220AB |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
INFINEON/英飞凌 |
24+ |
TO-220 |
160101 |
明嘉莱只做原装正品现货 |
|||
IR |
08+ |
TO-263 |
3000 |
||||
IR |
21+ |
TO-263 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR(国际整流器) |
24+ |
N/A |
7078 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
IRG4BC30K芯片相关品牌
IRG4BC30K规格书下载地址
IRG4BC30K参数引脚图相关
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- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG4BH20K-SPBF
- IRG4BH20K-LPBF
- IRG4BC40W-STRRP
- IRG4BC40W-SPBF
- IRG4BC40WPBF
- IRG4BC40W-LPBF
- IRG4BC40UPBF
- IRG4BC40SPBF
- IRG4BC40KPBF
- IRG4BC30W-STRLP
- IRG4BC30W-SPBF
- IRG4BC30WPBF
- IRG4BC30UPBF
- IRG4BC30UDPBF
- IRG4BC30S-STRLP
- IRG4BC30SPBF
- IRG4BC30KPBF
- IRG4BC30KDSTRLP
- IRG4BC30KD-SPBF
- IRG4BC30KDPBF
- IRG4BC30F-SPBF
- IRG4BC30FPBF
- IRG4BC30FDSTRRP
- IRG4BC30FD-SPBF
- IRG4BC30FDPBF
- IRG4BC30FD1PBF
- IRG4BC20UPBF
- IRG4BC20UDSTRRP
- IRG4BC20UD-SPBF
- IRG4BC20UDPBF
- IRG4BC20SPBF
- IRG4BC20SD-SPBF
- IRG4BC20SDPBF
- IRG4BC20MDPBF
- IRG4BC20KDSTRLP
- IRG4BC20KD-SPBF
- IRG4BC20KDPBF
- IRG4BC20FPBF
- IRG4BC20FDPBF
- IRG4BC15UD-SPBF
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4BC30K数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
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元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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