IRG4BC30K价格

参考价格:¥5.0478

型号:IRG4BC30KDPBF 品牌:INTERNATIONAL 备注:这里有IRG4BC30K多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4BC30K批发/采购报价,IRG4BC30K行情走势销售排行榜,IRG4BC30K报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRG4BC30K

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous

IRF

International Rectifier

IRF
IRG4BC30K

Fit Rate / Equivalent Device Hours

文件:98.39 Kbytes Page:35 Pages

IRF

International Rectifier

IRF
IRG4BC30K

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 28A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packag

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul

IRF

International Rectifier

IRF

INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR 

Short Circuit Rated UltraFast IGBT

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control tsc = 10 μs, @360V VCE(start), TJ = 125 °C VGE = 15V • Conbines low conduction losses with high switching speed • Latest generation design provides t

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:347.44 Kbytes Page:10 Pages

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:347.44 Kbytes Page:10 Pages

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

文件:376.96 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE

文件:376.96 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

文件:263.29 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 28A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

文件:263.29 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

文件:263.29 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

文件:263.29 Kbytes Page:9 Pages

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

IRF

International Rectifier

IRF

IGBT

DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:307.07 Kbytes Page:13 Pages

IRF

International Rectifier

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:307.07 Kbytes Page:13 Pages

IRF

International Rectifier

IRF

IRG4BC30K产品属性

  • 类型

    描述

  • 型号

    IRG4BC30K

  • 功能描述

    IGBT UFAST 600V 28A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> IGBT - 单路

  • 系列

    -

  • 标准包装

    30

  • 系列

    GenX3™ IGBT

  • 类型

    PT 电压 -

  • 集电极发射极击穿(最大)

    1200V Vge,

  • Ic时的最大Vce(开)

    3V @ 15V,100A 电流 -

  • 集电极(Ic)(最大)

    200A 功率 -

  • 最大

    830W

  • 输入类型

    标准

  • 安装类型

    通孔

  • 封装/外壳

    TO-247-3

  • 供应商设备封装

    PLUS247?-3

  • 包装

    管件

更新时间:2025-8-5 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
INFINEON/英飞凌
25+
TO-263
32360
INFINEON/英飞凌全新特价IRG4BC30K-STRR即刻询购立享优惠#长期有货
INFINEON/英飞凌
25+
TO-220AB
54648
百分百原装现货 实单必成 欢迎询价
INFINEON/英飞凌
24+
TO-220
160101
明嘉莱只做原装正品现货
IR原装
0435+
TO-220
4000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
23+
TO-220AB
3200
绝对全新原装!优势供货渠道!特价!请放心订购!
IR
23+
TO-220
800
专做原装正品,假一罚百!
IR
23+
TO-263
15000
代理原装现货,价格优势
IR
24+
TO-220
5000
只做原装正品现货 欢迎来电查询15919825718
IR
03+
原厂原装
1000
自己公司全新库存绝对有货

IRG4BC30K芯片相关品牌

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