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IRG4BC30KD-S价格
参考价格：￥10.4994
型号：IRG4BC30KD-SPBF 品牌：International 备注：这里有IRG4BC30KD-S多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4BC30KD-S批发/采购报价，IRG4BC30KD-S行情走势销售排行榜，IRG4BC30KD-S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC30KD-S | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul | IRF |   | |
IRG4BC30KD-S | 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package | INFINEON 英飞凌 | | |
INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ul | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE 文件：376.96 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE 文件：376.96 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC | IRF | | ||
IGBT DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC | ISC 无锡固电 | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：307.07 Kbytes Page：13 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：307.07 Kbytes Page：13 Pages | IRF | |
IRG4BC30KD-S产品属性
- 类型
描述
- 型号
IRG4BC30KD-S
- 制造商
International Rectifier
- 功能描述
IGBT D2-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
26+ |
TO-263 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
24+ |
TO-263 |
45000 |
IR代理原包原盒,假一罚十。最低价 |
|||
IR |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
IR |
24+ |
TO-263 |
6000 |
只做原装，欢迎询价，量大价优 |
|||
IR |
25+ |
TO-263 |
13 |
优势 |
|||
IR |
25+ |
TO263 |
10000 |
原装现货假一罚十 |
|||
Infineon |
24+ |
NA |
3321 |
进口原装正品优势供应 |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IR |
24+ |
SOP-263 |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
2022+ |
TO-220AB |
12888 |
原厂代理 终端免费提供样品 |
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IRG4BC30KD-S规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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