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IRG4BC30FPBF价格
参考价格：￥8.0042
型号：IRG4BC30FPBF 品牌：International 备注：这里有IRG4BC30FPBF多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4BC30FPBF批发/采购报价，IRG4BC30FPBF行情走势销售排行榜，IRG4BC30FPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4BC30FPBF | Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free Benefits • Generatio | IRF |   | |
IRG4BC30FPBF | INSULATED GATE BIPOLAR TRANSISTOR 文件：311 Kbytes Page：8 Pages | IRF | | |
IRG4BC30FPBF | 封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 31A TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：311 Kbytes Page：8 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package Benefits • Generation 4 IGBTs off | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-s | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( | IRF | |
IRG4BC30FPBF产品属性
- 类型
描述
- 型号
IRG4BC30FPBF
- 功能描述
IGBT 晶体管 600V Fast 1-8kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
IR |
07+ |
TO-220 |
10 |
全新 发货1-2天 |
|||
IR |
24+ |
TO-220 |
39197 |
郑重承诺只做原装进口现货 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
17+ |
TO220 |
6200 |
100%原装正品现货 |
|||
IR |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IR |
22+ |
TO-220 |
12245 |
现货,原厂原装假一罚十! |
|||
INFINEON/英飞凌 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
|||
INFINEON/IR |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
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IRG4BC30FPBF规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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