INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes Page：35 Pages

600V 超快 8-60 kHz Copack IGBT，采用 TO-220AB 封装

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-

ULTRA FAST COPACK IGBT

文件：386.87 Kbytes Page：10 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 23A 100W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ULTRA FAST COPACK IGBT

文件：386.87 Kbytes Page：10 Pages

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

IGBT

DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

INSULATED GATE BIPOLAR TRANSISTOR

文件：307.07 Kbytes Page：13 Pages

INSULATED GATE BIPOLAR TRANSISTOR

文件：307.07 Kbytes Page：13 Pages