Features

• Fast: Optimized for medium operating frequencies

(1-5 kHz in hard switching, >20 kHz in resonant mode).

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3.

• IGBT co-packaged with Hyperfast FRED diodes for ultra low

recovery characteristics.

Benefits

• Generation 4 IGBTs offer highest efficiencies available.

• IGBTs optimized for specific application conditions.

• FRED diodes optimized for performance with IGBTs.

Minimized recovery characteristics require less / no

snubbing.

• Designed to be a drop-in replacement for equivalent

industry-standard Generation 3 IR IGBTs.