IRG4BC30S-S价格

参考价格:¥9.0607

型号:IRG4BC30S-STRLP 品牌:International 备注:这里有IRG4BC30S-S多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4BC30S-S批发/采购报价,IRG4BC30S-S行情走势销售排行榜,IRG4BC30S-S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4BC30S-S

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

IRG4BC30S-S

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

IRG4BC30S-S

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

Features • Standard: optimized for minimum saturation voltage and low operating frequencies (

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

IRF

IGBT

DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC

ISC

无锡固电

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * Benefits • Typical Applications: SMPS, PFC

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:307.07 Kbytes Page:13 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:307.07 Kbytes Page:13 Pages

IRF

IRG4BC30S-S产品属性

  • 类型

    描述

  • 型号

    IRG4BC30S-S

  • 功能描述

    DIODE IGBT 600V 34A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> IGBT - 单路

  • 系列

    -

  • 标准包装

    30

  • 系列

    GenX3™ IGBT

  • 类型

    PT 电压 -

  • 集电极发射极击穿(最大)

    1200V Vge,

  • Ic时的最大Vce(开)

    3V @ 15V,100A 电流 -

  • 集电极(Ic)(最大)

    200A 功率 -

  • 最大

    830W

  • 输入类型

    标准

  • 安装类型

    通孔

  • 封装/外壳

    TO-247-3

  • 供应商设备封装

    PLUS247?-3

  • 包装

    管件

更新时间:2025-11-21 10:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2023+
D2-PAK
50000
原装现货
IR
05+
原厂原装
851
只做全新原装真实现货供应
IR
25+
TO-263
860000
明嘉莱只做原装正品现货
IR
24+
TO-263
5000
只做原装公司现货
IR
25+23+
TO-263
14078
绝对原装正品全新进口深圳现货
IR
22+
SOT263
8000
原装正品支持实单
IR
21+
SOT-263
10000
原装现货假一罚十
IR
2022+
TO-263
45
原厂代理 终端免费提供样品
IR
24+
NA
68932
只做原装正品现货 欢迎来电查询15919825718
IR
24+
65230

IRG4BC30S-S数据表相关新闻