2SJ557资料使用说明书瑞萨全球贸易商NEC-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第12394页 > 2SJ55

2SJ55价格

参考价格：￥1.1700

型号：2SJ551-90STR 品牌：HITACHI 备注：这里有2SJ55多少钱，2025年最近7天走势，今日出价，今日竞价，2SJ55批发/采购报价，2SJ55行情走势销售排行榜，2SJ55报价。

型号	功能描述	生产厂家企业	LOGO
2SJ550	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ550	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ550L	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ550L	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ550L-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ550S	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ550S	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ550STL-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ551	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ551	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ551L	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ551L	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ551L-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ551S	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ551S	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ551STL-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ552	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ552	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ552L	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ552L	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ552L	isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID=-20A@ TC=25℃ · Drain Source Voltage -VDSS=-60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.055Ω(MAX)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SJ552L-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ552S	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ552S	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ552STL-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ553	Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ553	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ553L	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ553L	Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ553L-E	Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ553S	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ553S	Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ553STL-E	Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ554	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ554	Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ554-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ555	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ555	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ555-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.	RENESAS 瑞萨	RENESAS
2SJ557	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be driven	NEC 瑞萨	NEC
2SJ557	MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch	RENESAS 瑞萨	RENESAS
2SJ557A	MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ557A is a switching device which can be driven directly by a 4 V power source. The 2SJ557A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swit	RENESAS 瑞萨	RENESAS
2SJ559	MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits	RENESAS 瑞萨	RENESAS
2SJ559	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source. • Low gat	NEC 瑞萨	NEC
2SJ550	P-Channel 60 V (D-S) MOSFET 文件：941.18 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ550(L)	Power switching MOSFET	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ550(L)/(S)	Silicon P-Channel MOS FET	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ550(L)_15	Silicon P Channel MOS FET 文件：115.18 Kbytes Page：11 Pages	RENESAS 瑞萨	RENESAS
2SJ550L	Power MOSFETs	RENESAS 瑞萨	RENESAS
2SJ550S	P-Channel 60 V (D-S) MOSFET 文件：1.87712 Mbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ551(L)_15	Silicon P Channel MOS FET 文件：114.91 Kbytes Page：11 Pages	RENESAS 瑞萨	RENESAS
2SJ552(L)_15	Silicon P Channel MOS FET 文件：115.37 Kbytes Page：11 Pages	RENESAS 瑞萨	RENESAS
2SJ553(L)_15	Silicon P Channel MOS FET 文件：115.51 Kbytes Page：11 Pages	RENESAS 瑞萨	RENESAS
2SJ554_15	Silicon P Channel MOS FET 文件：109.38 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SJ555_15	Silicon P Channel MOS FET 文件：109.35 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
2SJ557A_15	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 文件：283.91 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS

2SJ55产品属性

类型
描述
型号
2SJ55
功能描述
TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 8A I(D) | TO-3

2SJ55供应商更多...

更新时间：2025-11-22 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SJ557	NEC	24+	NA/	18000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市高捷芯城科技有限公司	2SJ557(0)T1B-AT	RENESAS(瑞萨)/IDT	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市威雅利发展有限公司	2SJ557	NEC	18+	SOT23	3000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市华睿芯科技有限公司	2SJ557A-T1B	NEC	24+	SOT23-3	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
中天科工半导体（深圳）有限公司	2SJ557	RENESAS/瑞萨	25+	SOT-23	20300	RENESAS/瑞萨原装特价2SJ557即刻询购立享优惠#长期有货	询价
深圳市振宏微科技有限公司	2SJ557	SMD	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市华斯顿科技有限公司	2SJ557A-T1B	NEC	25+23+	SOT23-3	29774	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市坤融电子科技有限公司	2SJ557-T1B-A	NEC	2025+	SOT-23	5000	原装进口价格优请找坤融电子!	询价
深圳市科恒伟业电子有限公司	2SJ557	NEC	2450+	SOT-23	9850	只做原装正品现货或订货假一赔十!	询价
深圳市一线半导体有限公司	2SJ557	NEC	24+	SOT-23	17900	新进库存/原装	询价

2SJ55芯片相关品牌

2SJ55规格书下载地址

2SJ55参数引脚图相关

2SJ55数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品现货供应
2024-3-23
2SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-17
2SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-8
2SD669AL-TO126T-D-TG_UTC代理商
2SD669AL-TO126T-D-TG_UTC代理商
2023-2-2
2SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-12
2SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

2SJ55价格

2SJ55产品属性

2SJ55供应商更多...

2SJ55芯片相关品牌

2SJ55规格书下载地址

2SJ55参数引脚图相关

2SJ55数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)

2SD669AL-TO92NLB-C-TG_UTC代理商

2SD882SL-TO92B-P-TG_UTC代理商

2SD669AL-TO126T-D-TG_UTC代理商

2SK1485-T1

2SK1985

DdatasheetPDF页码索引