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位置：首页 > IC中文资料第12394页 > 2SJ55

2SJ55价格

参考价格：￥1.1700

型号：2SJ551-90STR 品牌：HITACHI 备注：这里有2SJ55多少钱，2024年最近7天走势，今日出价，今日竞价，2SJ55批发/采购报价，2SJ55行情走势销售排行榜，2SJ55报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SJ550

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.075Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ550

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.075Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ550L

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.075Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ550L

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.075Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ550L-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.075Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ550S

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.075Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ550S

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.075Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ550STL-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.075Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ551

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.050Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ551

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.050Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ551L

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.050Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ551L

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.050Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ551L-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.050Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ551S

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.050Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ551S

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.050Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ551STL-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.050Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ552

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ552

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ552L

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ552L

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ552L-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ552S

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ552S

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ552STL-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.042Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ553

SiliconPChannelMOSFET

•Lowon-resistanceRDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ553

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ553L

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ553L

SiliconPChannelMOSFET

•Lowon-resistanceRDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ553L-E

SiliconPChannelMOSFET

•Lowon-resistanceRDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ553S

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ553S

SiliconPChannelMOSFET

•Lowon-resistanceRDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ553STL-E

SiliconPChannelMOSFET

•Lowon-resistanceRDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ554

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ554

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ554-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.028Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ555

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ555

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

HitachiHitachi, Ltd.

日立公司

Hitachi
2SJ555-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.017Ωtyp. •Lowdrivecurrent. •4Vgatedrivedevices. •Highspeedswitching.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ557

P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING

DESCRIPTION The2SJ557isaswitchingdevicewhichcanbedrivendirectlybya4Vpowersource. The2SJ557featuresalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •Canbedriven

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SJ557

MOSFIELDEFFECTTRANSISTOR

P-CHANNELMOSFIELDEFFECTTRANSISTOR FORSWITCHING DESCRIPTION The2SJ557isaswitchingdevicewhichcanbedrivendirectly bya4Vpowersource. The2SJ557featuresalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuch aspowerswitch

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ557A

MOSFIELDEFFECTTRANSISTOR

P-CHANNELMOSFIELDEFFECTTRANSISTOR FORSWITCHING DESCRIPTION The2SJ557Aisaswitchingdevicewhichcanbedrivendirectly bya4Vpowersource. The2SJ557Afeaturesalowon-stateresistanceandexcellent switchingcharacteristics,andissuitableforapplicationssuchas powerswit

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ559

MOSFIELDEFFECTTRANSISTOR

P-CHANNELMOSFIELDEFFECTTRANSISTOR FORHIGHSPEEDSWITCHING DESCRIPTION The2SJ559isaswitchingdevicewhichcanbedrivendirectlybya 2.5Vpowersource. The2SJ559hasexcellentswitchingcharacteristics,andissuitable foruseasahigh-speedswitchingdeviceindigitalcircuits

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ559

P-CHANNELMOSFIELDEFFECTTRANSISTORFORHIGHSPEEDSWITCHING

DESCRIPTION The2SJ559isaswitchingdevicewhichcanbedrivendirectlybya2.5Vpowersource. The2SJ559hasexcellentswitchingcharacteristics,andissuitableforuseasahigh-speedswitchingdeviceindigitalcircuits. FEATURES •Canbedrivenbya2.5Vpowersource. •Lowgat

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SJ550

P-Channel60V(D-S)MOSFET

文件：941.18 Kbytes Page：7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
2SJ550(L)_15

SiliconPChannelMOSFET

文件：115.18 Kbytes Page：11 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ550S

P-Channel60V(D-S)MOSFET

文件：1.87712 Mbytes Page：7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
2SJ551(L)_15

SiliconPChannelMOSFET

文件：114.91 Kbytes Page：11 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ552(L)_15

SiliconPChannelMOSFET

文件：115.37 Kbytes Page：11 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ553(L)_15

SiliconPChannelMOSFET

文件：115.51 Kbytes Page：11 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ554_15

SiliconPChannelMOSFET

文件：109.38 Kbytes Page：10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ555_15

SiliconPChannelMOSFET

文件：109.35 Kbytes Page：10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
2SJ557A_15

P-CHANNELMOSFIELDEFFECTTRANSISTORFORSWITCHING

文件：283.91 Kbytes Page：8 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SJ55产品属性

  • 类型

    描述

  • 型号

    2SJ55

  • 功能描述

    TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 8A I(D) | TO-3

2SJ55供应商更多...

更新时间：2024-5-24 18:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
2SJ557A
Renesas
20+
TMMSC-96
36800
原装优势主营型号-可开原型号增税票
询价
深圳市博浩通科技有限公司
2SJ557
NEC
23+
SOT-23
31000
全新原装现货
询价
深圳市得捷芯城科技有限公司
2SJ557
NEC
23+
NA/
18000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市高捷芯城科技有限公司
2SJ557(0)T1B-AT
RENESAS(瑞萨)/IDT
23+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市豪迈兴电子有限公司
2SJ557
NEC
2339+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
深圳市环球伟业电子有限公司
2SJ557
NEC/Renesas Electronics Americ
21+
SOT23
4880
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市振宏微科技有限公司
2SJ557
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市威雅利发展有限公司
2SJ557
NEC
18+
SOT23
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市英瑞尔电子科技有限公司
2SJ557A
Renesas
24+
TMMSC-96
85000
原装现货假一赔十
询价
深圳市一线半导体有限公司
2SJ557
NEC
2008++
SOT-23
17900
新进库存/原装
询价

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