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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ550 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ550 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | |
2SJ550 | P-Channel 60 V (D-S) MOSFET 文件：941.18 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
2SJ550 | Silicon P-Channel MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：115.18 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
丝印代码：D2PAK；P-Channel 60 V (D-S) MOSFET 文件：1.87712 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
2SJ550产品属性
- 类型
描述
- 型号
2SJ550
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
57048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
2026+ |
TO-263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
RENESAS |
05+ |
TO-263 |
435 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
26+ |
TO-263 |
360000 |
进口原装现货 |
|||
HITACHI |
25+ |
SOT-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
RENESAS |
23+ |
TO263 |
7850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS/瑞萨 |
2223+ |
TO263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
RENESAS/瑞萨 |
22+ |
TO263 |
8000 |
原装正品支持实单 |
|||
VBSEMI/微碧半导体 |
24+ |
TO263 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
2SJ550芯片相关品牌
2SJ550规格书下载地址
2SJ550参数引脚图相关
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- 2SJ552(S)
- 2SJ552(L)|2SJ552(S)
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- 2SJ551-L(E)
- 2SJ551L
- 2SJ551(L)|2SJ551(S)
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- 2SJ550S
- 2SJ550L-E
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- 2SJ550(S)(TL-E)
- 2SJ550(L)|2SJ550(S)
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- 2SJ542-E
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- 2SJ537
- 2SJ535
- 2SJ534
- 2SJ533
- 2SJ532
- 2SJ531
2SJ550数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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