型号 功能描述 生产厂家 企业 LOGO 操作
2SJ550L

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

2SJ550L

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

2SJ550L

Power MOSFETs

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

P-Channel 60 V (D-S) MOSFET

文件:941.18 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:115.18 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ550L产品属性

  • 类型

    描述

  • 型号

    2SJ550L

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2026-1-27 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
22+
SOT-263
100000
代理渠道/只做原装/可含税
RENESAS/瑞萨
2026+
TO-263
54648
百分百原装现货 实单必成 欢迎询价
NEXPERIA/安世
23+
SOT108-1
69820
终端可以免费供样,支持BOM配单!
HITACHI
24+
TO263
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
RENESAS瑞萨/HITACHI日立
24+
TO-262
6400
新进库存/原装
RENESAS
23+
TO-263
18592
NK/南科功率
2025+
TO-263
986966
国产
RENESAS/瑞萨
2023+
TO-263
2087
原厂全新正品旗舰店优势现货
HIT
22+
TO-263
20000
公司只有原装 品质保证

2SJ550L数据表相关新闻