型号 功能描述 生产厂家 企业 LOGO 操作
2SJ550L

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

2SJ550L

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

2SJ550L

Power MOSFETs

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

P-Channel 60 V (D-S) MOSFET

文件:941.18 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:115.18 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ550L产品属性

  • 类型

    描述

  • 型号

    2SJ550L

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2025-11-25 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
24+
NA/
5996
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
RENESAS
21+
TO-252
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
22+
SOT-263
100000
代理渠道/只做原装/可含税
RENESAS/瑞萨
25+
TO-263
54648
百分百原装现货 实单必成 欢迎询价
RENESAS
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
23+
TO-263
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
NEXPERIA/安世
23+
SOT108-1
69820
终端可以免费供样,支持BOM配单!
RENESAS瑞萨/HITACHI日立
24+
TO-262
6400
新进库存/原装
RENESAS/瑞萨
2023+
TO-263
2087
原厂全新正品旗舰店优势现货

2SJ550L数据表相关新闻