型号 功能描述 生产厂家 企业 LOGO 操作
2SJ551STL-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:114.91 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ551STL-E产品属性

  • 类型

    描述

  • 型号

    2SJ551STL-E

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2026-3-1 16:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
25+23+
TO263
74373
绝对原装正品现货,全新深圳原装进口现货
HIT
24+
TO-251
20000
RENESAS
03+
TO-263
950
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
24+
TO-263
5000
全新原装正品,现货销售
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
RENESAS
22+
TO-263
20000
公司只有原装 品质保证
RENESAS
24+
TO-263
16900
原装正品现货支持实单
RENESAS
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
日立
22+
6000
220
十年配单,只做原装

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