位置：首页 > IC中文资料 > 2SJ551(L)_15
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ551(L)_15 | Silicon P Channel MOS FET 文件：114.91 Kbytes Page：11 Pages | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-263 |
7100 |
新进库存/原装 |
|||
NEC |
2022+ |
LDPAK(L)TO-262 |
12888 |
原厂代理 终端免费提供样品 |
|||
RENESAS |
26+ |
TO-263 |
12000 |
原装，正品 |
|||
RENESAS/瑞萨 |
25+ |
TO-263-2 |
106 |
就找我吧!--邀您体验愉快问购元件! |
|||
HITACHI |
1922+ |
SOT-263 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
HITACHI |
22+ |
TO-263 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
32500 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS/瑞萨 |
2450+ |
TO-263 |
9485 |
只做原装正品现货或订货假一赔十! |
|||
RENESAS |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
2SJ551(L)_15芯片相关品牌
2SJ551(L)_15规格书下载地址
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DdatasheetPDF页码索引
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