位置：首页 > IC中文资料 > 2SJ551(L)_15
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ551(L)_15 | Silicon P Channel MOS FET 文件：114.91 Kbytes Page：11 Pages | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2511 |
TO-263 |
950 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
NEC |
2022+ |
LDPAK(L)TO-262 |
12888 |
原厂代理 终端免费提供样品 |
|||
RENESAS/瑞萨 |
25+ |
TO-263-2 |
106 |
就找我吧!--邀您体验愉快问购元件! |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
HITACHI |
1922+ |
SOT-263 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
HITACHI |
05+ |
TO-263 |
1760 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HITACHI |
23+ |
TO-263 |
1760 |
全新原装正品现货,支持订货 |
|||
NEXPERIA/安世 |
23+ |
SOT337-1 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
32500 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
22800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
2SJ551(L)_15规格书下载地址
2SJ551(L)_15参数引脚图相关
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2SJ551(L)_15数据表相关新闻
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DdatasheetPDF页码索引
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