型号 功能描述 生产厂家 企业 LOGO 操作
2SJ551L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:114.91 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ551L-E产品属性

  • 类型

    描述

  • 型号

    2SJ551L-E

  • 制造商

    Renesas Electronics

  • 功能描述

    Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box Tray

更新时间:2026-1-5 17:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
2450+
TO-263
9485
只做原装正品现货或订货假一赔十!
RENESAS
25+
TO-263
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
RENESAS
24+
TO-263
5000
全新原装正品,现货销售
HITACHI
24+
TO-263
36800
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
22+
TO-263
20000
公司只有原装 品质保证
RENESAS/瑞萨
20+
TO-263
32500
现货很近!原厂很远!只做原装
RENESAS/瑞萨
24+
NA/
22800
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
24+
TO-263
16900
原装正品现货支持实单

2SJ551L-E数据表相关新闻