型号 功能描述 生产厂家 企业 LOGO 操作
2SJ550L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

P-Channel 60 V (D-S) MOSFET

文件:941.18 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:115.18 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ550L-E产品属性

  • 类型

    描述

  • 型号

    2SJ550L-E

  • 制造商

    Renesas Electronics Corporation

更新时间:2025-11-26 9:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBSEMI/微碧半导体
24+
TO263
7800
全新原厂原装正品现货,低价出售,实单可谈
24+
N/A
67000
一级代理-主营优势-实惠价格-不悔选择
RENESAS
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
24+
TO263
60000
RENESAS
25+
TO-263
8800
公司只做原装,详情请咨询
RENESAS
24+
TO-263
16900
原装正品现货支持实单
HITACHI
24+
TO263
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
RENESAS/瑞萨
2023+
TO-263
2087
原厂全新正品旗舰店优势现货
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!

2SJ550L-E数据表相关新闻