型号 功能描述 生产厂家 企业 LOGO 操作
2SJ552L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:115.37 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ552L-E产品属性

  • 类型

    描述

  • 型号

    2SJ552L-E

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) LDPAK(L) Box Bulk

更新时间:2025-10-11 8:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
20+
TO-263
15961
进口原装现货,假一赔十
RENESAS/瑞萨
22+
SOT263
100000
代理渠道/只做原装/可含税
RENESAS
2023+
SOT263
8800
正品渠道现货 终端可提供BOM表配单。
RENESAS/瑞萨
24+
NA/
31773
原装现货,当天可交货,原型号开票
RENESAS/瑞萨
07+
TO-263
6000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
2450+
TO263
8850
只做原装正品假一赔十为客户做到零风险!!
25+23+
SIP-2.5
8231
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
2511
TO-263
15961
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
RENESAS瑞萨/HITACHI日立
24+
TO-262
6205
新进库存/原装

2SJ552L-E数据表相关新闻