型号 功能描述 生产厂家 企业 LOGO 操作
2SJ552L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:115.37 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ552L-E产品属性

  • 类型

    描述

  • 型号

    2SJ552L-E

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) LDPAK(L) Box Bulk

更新时间:2026-1-27 17:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
25+23+
SIP-2.5
8231
绝对原装正品全新进口深圳现货
RENESAS瑞萨/HITACHI日立
24+
TO-262
6205
新进库存/原装
RENESAS/瑞萨
2450+
TO263
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS/瑞萨
24+
TO-263
21574
郑重承诺只做原装进口现货
NK/南科功率
2025+
TO-263
986966
国产
RENESAS/瑞萨
25+
TO263
9800
全新原装现货,假一赔十
2000
SIP-2.5
8
原装现货海量库存欢迎咨询
RENESAS/瑞萨
22+
TO-263
20000
公司只有原装 品质保证
RENESAS/瑞萨
20+
TO-263
32500
现货很近!原厂很远!只做原装

2SJ552L-E数据表相关新闻