位置：首页 > IC中文资料第5780页 > 2SJ550S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ550S | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SJ550S | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | |
2SJ550S | P-Channel 60 V (D-S) MOSFET 文件：1.87712 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
2SJ550S | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
P-Channel 60 V (D-S) MOSFET 文件：941.18 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：115.18 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
2SJ550S产品属性
- 类型
描述
- 型号
2SJ550S
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2511 |
TO-263 |
435 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
67000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS |
1922+ |
SOT-262 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
VBSEMI/台湾微碧 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-262 |
6400 |
新进库存/原装 |
|||
VBSEMI/微碧半导体 |
24+ |
TO263 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
RENESAS/瑞萨 |
2023+ |
TO-263 |
2087 |
原厂全新正品旗舰店优势现货 |
|||
RENESAS |
2024 |
TO-263 |
58209 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
57048 |
支持大陆交货,美金交易。原装现货库存。 |
2SJ550S规格书下载地址
2SJ550S参数引脚图相关
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- 2SJ553(L)|2SJ553(S)
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- 2SJ551(L)|2SJ551(S)
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2019-10-30
DdatasheetPDF页码索引
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