型号 功能描述 生产厂家 企业 LOGO 操作
2SJ553L

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

2SJ553L

Silicon P Channel MOS FET

• Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

RENESAS

瑞萨

2SJ553L

Power MOSFETs

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

• Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

• Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:115.51 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ553L产品属性

  • 类型

    描述

  • 型号

    2SJ553L

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2025-10-11 13:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
TO-263
60000
ISC/固电
23+
I2PAKTO-262
94888
原厂授权代理,海外优势订货渠道。可提供大量库存,详
原装
25+
TO-252
20300
原装特价2SJ553L即刻询购立享优惠#长期有货
NEXPERIA/安世
23+
SOT-23
69820
终端可以免费供样,支持BOM配单!
RENESAS/瑞萨
20+
TO-263
32500
现货很近!原厂很远!只做原装
RENESAS
2016+
TO263
3000
只做原装,假一罚十,公司可开17%增值税发票!
HITACHI
24+
TO-263
36800
HIT
24+
TO-263
5000
全现原装公司现货
RENESAS
08+PBF
TO-263
950
优势
HIT
24+
NA
5500
只做原装正品现货 欢迎来电查询15919825718

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