位置：首页 > IC中文资料第6252页 > 2SJ553L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ553L | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ553L | Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | |
2SJ553L | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：115.51 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
2SJ553L产品属性
- 类型
描述
- 型号
2SJ553L
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOT-23 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
RENESAS |
23+ |
NA |
302 |
专做原装正品,假一罚百! |
|||
HITACHI/日立 |
2450+ |
SOT-263 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
HITACHI |
24+ |
TO-263 |
36800 |
||||
HIT |
24+ |
NA |
5500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
RENESAS |
25+ |
TO-263 |
583 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
HIT |
23+ |
TO-262 |
5000 |
原装正品,假一罚十 |
|||
RENESAS/瑞萨 |
20+ |
TO-263 |
32500 |
现货很近!原厂很远!只做原装 |
2SJ553L芯片相关品牌
2SJ553L规格书下载地址
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- 2SJ553(L)|2SJ553(S)
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2019-10-30
DdatasheetPDF页码索引
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