位置：首页 > IC中文资料第1615页 > 2SJ555-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ555-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | |
2SJ555-E产品属性
- 类型
描述
- 型号
2SJ555-E
- 制造商
Renesas Electronics
- 功能描述
Trans MOSFET P-CH 60V 60A 3-Pin(3+Tab) TO-3P Tray
- 制造商
Renesas Electronics Corporation
- 功能描述
Pch MOSFET,60V,60A,17m ohm,TO-3P
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas |
20+ |
TMMSC-96 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
2450+ |
TO-3P |
9850 |
只做原装正品现货或订货假一赔十! |
|||
HITACHI/日立 |
23+ |
TO-247 |
5880 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
24+ |
SOT-23 |
6500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
TOSHIBA/东芝 |
2223+ |
SOT-23 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
HIT |
24+ |
TO-3P |
20000 |
||||
Renesas |
24+ |
TMMSC-96 |
85000 |
原装现货假一赔十 |
|||
Renesas |
16+ |
TMMSC-96 |
85000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
2SJ555-E规格书下载地址
2SJ555-E参数引脚图相关
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- 2SJ551
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- 2SJ550
- 2SJ549S
- 2SJ549L
- 2SJ549
- 2SJ548
- 2SJ547
- 2SJ546
2SJ555-E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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