型号 功能描述 生产厂家 企业 LOGO 操作
2SJ552STL-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:115.37 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ552STL-E产品属性

  • 类型

    描述

  • 型号

    2SJ552STL-E

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2026-3-1 16:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
25+23+
SIP-2.5
8231
绝对原装正品全新进口深圳现货
RENESAS瑞萨/HITACHI日立
24+
TO-262
6205
新进库存/原装
RENESAS/瑞萨
07+
TO-263
6000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
HIT
23+
TO-262
5000
原装正品,假一罚十
RENESAS/瑞萨
22+
TO-263
20000
公司只有原装 品质保证
RENESAS/瑞萨
24+
TO-263
16900
原装正品现货支持实单
HITACHI
1922+
SOT-262
35689
原装进口现货库存专业工厂研究所配单供货
RENESAS
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
RENESAS
原厂封装
9800
原装进口公司现货假一赔百

2SJ552STL-E数据表相关新闻