型号 功能描述 生产厂家 企业 LOGO 操作
2SJ552STL-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:115.37 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ552STL-E产品属性

  • 类型

    描述

  • 型号

    2SJ552STL-E

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2025-10-13 11:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
2511
TO-263
15961
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
RENESAS/瑞萨
23+
TO263
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS/瑞萨
23+
TO263
6500
专注配单,只做原装进口现货
NEXPERIA/安世
23+
SOT-23
69820
终端可以免费供样,支持BOM配单!
HITACHI
1922+
SOT-262
35689
原装进口现货库存专业工厂研究所配单供货
25+23+
SIP-2.5
8231
绝对原装正品全新进口深圳现货
RENESAS瑞萨/HITACHI日立
24+
TO-262
6205
新进库存/原装
RENESAS/瑞萨
2450+
TO263
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS
24+
SOT263
5000
只做原装公司现货
RENESAS/瑞萨
24+
TO-263
21574
郑重承诺只做原装进口现货

2SJ552STL-E数据表相关新闻