型号 功能描述 生产厂家 企业 LOGO 操作
2SJ552STL-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.042 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:115.37 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ552STL-E产品属性

  • 类型

    描述

  • 型号

    2SJ552STL-E

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2026-1-1 9:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
22+
TO-263
20000
公司只有原装 品质保证
RENESAS/瑞萨
23+
TO263
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
24+
TO-252
30000
只做正品原装现货
RENESAS/瑞萨
25+
TO-263
8800
公司只做原装,详情请咨询
RENESAS/瑞萨
24+
TO-263
16900
原装正品现货支持实单
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS/瑞萨
20+
TO-263
15961
进口原装现货,假一赔十
RENESAS/瑞萨
24+
TO-263
21574
郑重承诺只做原装进口现货
RENESAS/瑞萨
22+
SOT263
100000
代理渠道/只做原装/可含税

2SJ552STL-E数据表相关新闻