型号 功能描述 生产厂家 企业 LOGO 操作
2SJ550STL-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HITACHIHitachi Semiconductor

日立日立公司

P-Channel 60 V (D-S) MOSFET

文件:941.18 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:115.18 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ550STL-E产品属性

  • 类型

    描述

  • 型号

    2SJ550STL-E

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) LDPAK(S)-(1) T/R

更新时间:2026-1-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Renesas(瑞萨)
24+
标准封装
57048
支持大陆交货,美金交易。原装现货库存。
RENESAS/瑞萨
2026+
TO-263
54648
百分百原装现货 实单必成 欢迎询价
RENESAS/瑞萨
22+
SOT263
100000
代理渠道/只做原装/可含税
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
RENESAS
26+
TO-263
360000
进口原装现货
VBSEMI/微碧半导体
24+
TO263
7800
全新原厂原装正品现货,低价出售,实单可谈
HIT
24+
TO-251
20000
RENESAS
1650+
TO263
1251
NK/南科功率
2025+
TO-263
986966
国产
RENESAS/瑞萨
2023+
TO-263
2087
原厂全新正品旗舰店优势现货

2SJ550STL-E数据表相关新闻