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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ550(L) | Power switching MOSFET | HitachiHitachi Semiconductor 日立日立公司 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
P-Channel 60 V (D-S) MOSFET 文件：941.18 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Silicon P-Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：115.18 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
22+ |
TO263 |
8000 |
原装正品支持实单 |
|||
RENESAS/瑞萨 |
2223+ |
TO263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
RENESAS |
2023+ |
TO263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
117 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
08+ |
TO263 |
97 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
23+ |
TO263 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
HITACHI |
24+ |
TO-263 |
36800 |
2SJ550(L)规格书下载地址
2SJ550(L)参数引脚图相关
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- 2SJ547
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- 2SJ546(E)
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- 2SJ545
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- 2SJ543
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- 2SJ533
- 2SJ532
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DdatasheetPDF页码索引
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