位置：首页 > IC中文资料 > 2SJ550(L)_15
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ550(L)_15 | Silicon P Channel MOS FET 文件：115.18 Kbytes Page：11 Pages | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
P-Channel 60 V (D-S) MOSFET 文件：941.18 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
TO-263 |
60000 |
全新原装现货 |
|||
RENESAS/瑞萨 |
23+ |
TO263 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS |
23+ |
TO263 |
237 |
全新原装正品现货,支持订货 |
|||
RENESAS |
2511 |
TO263 |
237 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
HITACHI |
25+ |
SOT-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
RENESAS |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS |
1922+ |
TO263 |
6598 |
原装进口现货库存专业工厂研究所配单供货 |
|||
RENESAS/瑞萨 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
HITACHI |
24+ |
TO-263 |
36800 |
||||
RENESAS/瑞萨 |
2223+ |
TO263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
2SJ550(L)_15规格书下载地址
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2SJ550(L)_15数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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