型号 功能描述 生产厂家 企业 LOGO 操作
2SJ551L

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

2SJ551L

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

2SJ551L

Power MOSFETs

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:114.91 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ551L产品属性

  • 类型

    描述

  • 型号

    2SJ551L

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon P Channel MOS FET

更新时间:2025-12-27 10:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
21+
TO-252
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEXPERIA/安世
23+
SOT337-1
69820
终端可以免费供样,支持BOM配单!
RENESAS
26+
TO-263
12000
原装,正品
RENESAS/瑞萨
25+
TO-263-2
106
就找我吧!--邀您体验愉快问购元件!
HITACHI/日立
17+
262
31518
原装正品 可含税交易
NK/南科功率
2025+
TO-263
986966
国产
RENESAS
22+
TO-263
20000
公司只有原装 品质保证
RENESAS/瑞萨
23+
TO-263
32500
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
RENESAS/瑞萨
24+
TO-263
60000

2SJ551L数据表相关新闻