位置：首页 > IC中文资料第6247页 > 2SJ555
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ555 | Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ555 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | |
2SJ555 | Silicon P Channel MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SJ555 | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.017 Ωtyp. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：109.35 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ555产品属性
- 类型
描述
- 型号
2SJ555
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HIT |
24+ |
TO-3P |
20000 |
||||
RENESAS |
16+17+ |
TO-3P |
904 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
2450+ |
TO-3P |
9850 |
只做原装正品现货或订货假一赔十! |
|||
RENESAS |
22+ |
TO-3P |
20000 |
公司只有原装 品质保证 |
|||
Renesas(瑞萨) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
RENESAS |
24+ |
TO-3P |
16900 |
原装正品现货支持实单 |
|||
RENESAS/瑞萨 |
11+ |
TO-3P |
2844 |
原装现货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
2022+ |
TO-3P |
50000 |
原厂代理 终端免费提供样品 |
|||
RENESAS |
2023+ |
TO-3P |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
2SJ555规格书下载地址
2SJ555参数引脚图相关
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- 2SJ553-L(E)
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- 2SJ553(L)|2SJ553(S)
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- 2SJ552S
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- 2SJ552(L)
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- 2SJ551S
- 2SJ551L
- 2SJ551
- 2SJ550S
- 2SJ550L
- 2SJ550
- 2SJ549S
- 2SJ549L
- 2SJ549
- 2SJ548
- 2SJ547
- 2SJ546
- 2SJ545
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2019-10-30
DdatasheetPDF页码索引
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