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RJH60F价格

参考价格：￥11.5977

型号：RJH60F0DPK-00#T0 品牌：Renesas 备注：这里有RJH60F多少钱，2026年最近7天走势，今日出价，今日竞价，RJH60F批发/采购报价，RJH60F行情走势销售排行榜，RJH60F报价。

型号	功能描述	生产厂家企业	LOGO
RJH60F0DPK	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 Ω, Ta =	RENESAS 瑞萨	RENESAS
RJH60F0DPK-00-T0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 Ω, Ta =	RENESAS 瑞萨	RENESAS
RJH60F0DPQ-A0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5	RENESAS 瑞萨	RENESAS
RJH60F0DPQ-A0-T0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5	RENESAS 瑞萨	RENESAS
RJH60F3DPK	Silicon N Channel IGBT High Speed Power Switching Features ● Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) ● Built in fast recovery diode in one package ● Trench gate and thin wafer technology ● High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg =	RENESAS 瑞萨	RENESAS
RJH60F3DPQ-A0	600 V - 20 A - IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω,	RENESAS 瑞萨	RENESAS
RJH60F4DPK	Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 30 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 80 ns typ. (at IC=	RENESAS 瑞萨	RENESAS
RJH60F4DPK-00-T0	Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 30 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 80 ns typ. (at IC=	RENESAS 瑞萨	RENESAS
RJH60F4DPQ-A0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta	RENESAS 瑞萨	RENESAS
RJH60F4DPQ-A0-T0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta	RENESAS 瑞萨	RENESAS
RJH60F5	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω	RENESAS 瑞萨	RENESAS
RJH60F5BDPQ-A0	600V - 40A - IGBT High Speed Power Switching Features ● Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) ● Built in fast recovery diode in one package ● Trench gate and thin wafer technology ● High speed switching tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 1	RENESAS 瑞萨	RENESAS
RJH60F5DPK	Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode	RENESAS 瑞萨	RENESAS
RJH60F5DPK-00-T0	Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode	RENESAS 瑞萨	RENESAS
RJH60F5DPQ-A0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω	RENESAS 瑞萨	RENESAS
RJH60F5DPQ-A0-T0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω	RENESAS 瑞萨	RENESAS
RJH60F6BDPQ-A0	600V - 45A - IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.35 V typ. (at IC= 45 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 74 ns typ. (at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 ,	RENESAS 瑞萨	RENESAS
RJH60F6DPK	Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.35 V typ. (at IC= 45 A, VGE= 15V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 95 ns typ. (at IC= 30 A, Resistive Load, VCC= 300 V, VGE= 15 V, Rg = 5Ω 	RENESAS 瑞萨	RENESAS
RJH60F6DPK-00-T0	Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.35 V typ. (at IC= 45 A, VGE= 15V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 95 ns typ. (at IC= 30 A, Resistive Load, VCC= 300 V, VGE= 15 V, Rg = 5Ω 	RENESAS 瑞萨	RENESAS
RJH60F6DPQ-A0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat)= 1.35 V typ. (at IC= 45 A, VGE= 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf= 74 ns typ. (at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 Ω	RENESAS 瑞萨	RENESAS
RJH60F6DPQ-A0-T0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat)= 1.35 V typ. (at IC= 45 A, VGE= 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf= 74 ns typ. (at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 Ω	RENESAS 瑞萨	RENESAS
RJH60F7	Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg	RENESAS 瑞萨	RENESAS
RJH60F7ADPK	Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg	RENESAS 瑞萨	RENESAS
RJH60F7ADPK-00-T0	Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg	RENESAS 瑞萨	RENESAS
RJH60F7BDPQ-A0	600V - 50A - IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg	RENESAS 瑞萨	RENESAS
RJH60F7DPQ-A0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V,	RENESAS 瑞萨	RENESAS
RJH60F7DPQ-A0-T0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V,	RENESAS 瑞萨	RENESAS
RJH60F0DPK	Silicon N Channel IGBT High Speed Power Switching 文件：92.31 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F0DPK_10	Silicon N Channel IGBT High Speed Power Switching 文件：92.31 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F0DPK_15	Silicon N Channel IGBT High Speed Power Switching 文件：95.17 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F0DPK-00-T0	Silicon N Channel IGBT High Speed Power Switching 文件：92.31 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F0DPQ-A0	IGBTs	RENESAS 瑞萨	RENESAS
RJH60F0DPQ-A0#T0	封装/外壳：TO-247-3 包装：管件描述：IGBT 600V 50A 201.6W TO-247A 分立半导体产品晶体管 - UGBT、MOSFET - 单	ETC 知名厂家	ETC
RJH60F0DPQ-A0_15	600 V - 25 A - IGBT High Speed Power Switching 文件：95.83 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F3DPK	IGBTs	RENESAS 瑞萨	RENESAS
RJH60F3DPK_15	Silicon N Channel IGBT High Speed Power Switching 文件：94.23 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F3DPK-00#T0	封装/外壳：TO-220-3 整包包装：管件描述：IGBT 600V 40A 178.5W TO-3P 分立半导体产品晶体管 - UGBT、MOSFET - 单	ETC 知名厂家	ETC
RJH60F3DPQ-A0	IGBTs	RENESAS 瑞萨	RENESAS
RJH60F3DPQ-A0_15	600 V - 20 A - IGBT High Speed Power Switching 文件：94.94 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F4DPK	Silicon N Channel IGBT High Speed Power Switching 文件：88.06 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F4DPK_10	Silicon N Channel IGBT High Speed Power Switching 文件：88.06 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F4DPK_11	Silicon N Channel IGBT High Speed Power Switching 文件：93.42 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F4DPK_15	Silicon N Channel IGBT High Speed Power Switching 文件：93.42 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F4DPK-00-T0	Silicon N Channel IGBT High Speed Power Switching 文件：88.06 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F4DPQ-A0_15	600 V - 30 A - IGBT High Speed Power Switching 文件：88.73 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F5	600 V - 40 A - IGBT High Speed Power Switching 文件：94.79 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F5BDPQ-A0_15	600V - 40A - IGBT High Speed Power Switching 文件：101.63 Kbytes Page：9 Pages	RENESAS 瑞萨	RENESAS
RJH60F5DPK	Silicon N Channel IGBT High Speed Power Switching 文件：86.04 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F5DPK_10	Silicon N Channel IGBT High Speed Power Switching 文件：86.04 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F5DPK_11	Silicon N Channel IGBT High Speed Power Switching 文件：91.7 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F5DPK_15	Silicon N Channel IGBT High Speed Power Switching 文件：91.7 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F5DPK-00-T0	Silicon N Channel IGBT High Speed Power Switching 文件：86.04 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F5DPQ-A0	600 V - 40 A - IGBT High Speed Power Switching 文件：94.79 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F5DPQ-A0_15	600 V - 40 A - IGBT High Speed Power Switching 文件：94.79 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F6BDPQ-A0_15	600V - 45A - IGBT High Speed Power Switching 文件：101.99 Kbytes Page：9 Pages	RENESAS 瑞萨	RENESAS
RJH60F6DPK_11	Silicon N Channel IGBT High Speed Power Switching 文件：92.68 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F6DPK_15	Silicon N Channel IGBT High Speed Power Switching 文件：92.68 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F6DPQ-A0_15	600 V - 45 A - IGBT High Speed Power Switching 文件：95.97 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F7	Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F7	Silicon N Channel IGBT High Speed Power Switching 文件：88.1 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS

RJH60F产品属性

类型
描述
型号
RJH60F
制造商
RENESAS
制造商全称
Renesas Technology Corp
功能描述
Silicon N Channel IGBT High Speed Power Switching

RJH60F供应商更多...

更新时间：2026-3-15 22:31:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市亿联芯电子科技有限公司	RJH60F3	RENESAS/瑞萨	2023+	TO-247	6893	十五年行业诚信经营,专注全新正品	询价
深圳市科芯源微电子有限公司	RJH60F0DPQ-A0#T0	RENESAS/瑞萨	2026+	原厂原封可拆样	54648	百分百原装现货实单必成欢迎询价	询价
深圳市科恒伟业电子有限公司	RJH60F0DPQ	RENESAS/瑞萨	2517+	TO247	8850	只做原装正品现货或订货假一赔十!	询价
深圳市星宇佳科技有限公司	RJH60F3DPQ-A0#T0	RENESAS/瑞萨	19+20+		9999	原装现货支持BOM配单服务	询价
洪芯国际半导体（深圳）有限公司	RJH60F0DPQ-A0#T0	renesas	26+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市明嘉莱科技有限公司	RJH60F3	RENESAS/瑞萨	25+	TO-247	860000	明嘉莱只做原装正品现货	询价
深圳市凌旭科技有限公司	RJH60F3	RENESAS/瑞萨	21+	TO-247	1062	只做原装正品,不止网上数量,欢迎电话微信查询!	询价
深圳市正纳电子有限公司	RJH60F3DPQ-A0-T0	RENESAS	/ROHS.original	原封	15120	集成电路供应 -正纳电子/ 原材料及元器件IC MOS MCU	询价
深圳市安富世纪电子有限公司	RJH60F0DPQ	RENESAS	23+	TO247	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	RJH60F0DPQ-AO	RENESAS/瑞萨	23+	TO-247	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价

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2020-1-13

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找IC，尽在114IC

RJH60F价格

RJH60F产品属性

RJH60F供应商更多...

RJH60F芯片相关品牌

RJH60F规格书下载地址

RJH60F参数引脚图相关

RJH60F数据表相关新闻

RJGT102WDP8

RJH60F5DPQ-A0#T0 晶体管 IGBT

RJ45网口连接器,8p8c,

RJ12电话座连接器

RJH60F7DPQ-A0

RJH60F7DPQ

DdatasheetPDF页码索引