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RJH60F7价格

参考价格：￥19.2686

型号：RJH60F7BDPQ-A0#T0 品牌：Renesas 备注：这里有RJH60F7多少钱，2025年最近7天走势，今日出价，今日竞价，RJH60F7批发/采购报价，RJH60F7行情走势销售排行榜，RJH60F7报价。

型号	功能描述	生产厂家企业	LOGO
RJH60F7	Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg	RENESAS 瑞萨	RENESAS
RJH60F7	Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F7	Silicon N Channel IGBT High Speed Power Switching 文件：88.1 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F7	Silicon N Channel IGBT / High Speed Power Switching / TO-3P Package	RENESAS 瑞萨	RENESAS
RJH60F7ADPK	Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg	RENESAS 瑞萨	RENESAS
RJH60F7ADPK-00-T0	Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg	RENESAS 瑞萨	RENESAS
RJH60F7BDPQ-A0	600V - 50A - IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg	RENESAS 瑞萨	RENESAS
RJH60F7DPQ-A0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V,	RENESAS 瑞萨	RENESAS
RJH60F7DPQ-A0-T0	Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V,	RENESAS 瑞萨	RENESAS
RJH60F7ADPK	Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F7ADPK	Silicon N Channel IGBT High Speed Power Switching 文件：88.1 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F7ADPK_10	Silicon N Channel IGBT High Speed Power Switching 文件：88.1 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F7ADPK_11	Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F7ADPK_15	Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F7ADPK-00-T0	Silicon N Channel IGBT High Speed Power Switching 文件：88.1 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
RJH60F7ADPK-00-T0	Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60F7BDPQ-A0	IGBTs	RENESAS 瑞萨	RENESAS
RJH60F7BDPQ-A0#T0	封装/外壳：TO-247-3 包装：管件描述：IGBT 600V 90A 328.9W TO-247A 分立半导体产品晶体管 - UGBT、MOSFET - 单	ETC 知名厂家	ETC
RJH60F7BDPQ-A0_15	600V - 50A - IGBT High Speed Power Switching 文件：218.55 Kbytes Page：9 Pages	RENESAS 瑞萨	RENESAS
RJH60F7DPQ-A0	IGBTs	RENESAS 瑞萨	RENESAS
RJH60F7DPQ-A0#T0	封装/外壳：TO-247-3 包装：管件描述：IGBT 600V 90A 328.9W TO247A 分立半导体产品晶体管 - UGBT、MOSFET - 单	ETC 知名厂家	ETC
RJH60F7DPQ-A0_15	600 V - 50 A - IGBT High Speed Power Switching 文件：95.38 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS

RJH60F7产品属性

类型
描述
型号
RJH60F7
制造商
RENESAS
制造商全称
Renesas Technology Corp
功能描述
Silicon N Channel IGBT High Speed Power Switching

RJH60F7供应商更多...

更新时间：2025-9-26 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	RJH60F7DPQ-A0	Renesas(瑞萨)	24+	标准封装	10848	支持大陆交货,美金交易。原装现货库存。	询价
深圳市得捷芯城科技有限公司	RJH60F7	RENESAS/瑞萨	24+	NA/	300	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市科芯源微电子有限公司	RJH60F7	RENESAS/瑞萨	25+	TO247	54648	百分百原装现货实单必成欢迎询价	询价
中天科工半导体（深圳）有限公司	RJH60F7DPQ-A0#T0	RENESAS/瑞萨	25+	TO-247	32360	RENESAS/瑞萨全新特价RJH60F7DPQ-A0#T0即刻询购立享优惠#长期有货	询价
深圳市明嘉莱科技有限公司	RJH60F7	RENESAS/瑞萨	24+	TO247	990000	明嘉莱只做原装正品现货	询价
深圳市威雅利发展有限公司	RJH60F7	RENESAS	15+	TO-247	6	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市诺美思科技有限公司	RJH60F7	RENESAS		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市正纳电子有限公司	RJH60F7	Renesas(瑞萨)	23+	原厂封装	32078	10年以上分销商,原装进口件,服务型企业	询价
千层芯半导体(深圳)有限公司	RJH60F7ADPK	RENESAS	24+	TO-3P	3000	全新原装环保现货	询价
深圳市宏世佳电子科技有限公司	RJH60F7ADPK	RENESAS	2025+	TO-3P	4755	全新原厂原装产品、公司现货销售	询价

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RJH60F7价格

RJH60F7产品属性

RJH60F7供应商更多...

RJH60F7芯片相关品牌

RJH60F7规格书下载地址

RJH60F7参数引脚图相关

RJH60F7数据表相关新闻

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RJ45网口连接器,8p8c,

RJH60F7DPQ-A0

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DdatasheetPDF页码索引