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RJH60F0DPK价格
参考价格：￥11.5977
型号：RJH60F0DPK-00#T0 品牌：Renesas 备注：这里有RJH60F0DPK多少钱，2025年最近7天走势，今日出价，今日竞价，RJH60F0DPK批发/采购报价，RJH60F0DPK行情走势销售排行榜，RJH60F0DPK报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJH60F0DPK | Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = | RENESAS 瑞萨 |   | |
RJH60F0DPK | Silicon N Channel IGBT High Speed Power Switching 文件：92.31 Kbytes Page：8 Pages | RENESAS 瑞萨 | | |
RJH60F0DPK | IGBTs | RENESAS 瑞萨 | | |
Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：92.31 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：95.17 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
封装/外壳：TO-220-3 整包 包装：卷带（TR） 描述：IGBT 600V 50A 201.6W TO-3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
Silicon N Channel IGBT High Speed Power Switching 文件：92.31 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
600 V - 25 A - IGBT High Speed Power Switching 600 V - 25 A - IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 25 A, VGE= 15V, Ta = 25°C) Trench gate and thin wafer technology High speed switching tf= 90 ns typ. (at IC= 30 A, VCE | RENESAS 瑞萨 | | ||
600 V - 25 A - IGBT High Speed Power Switching 600 V - 25 A - IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 25 A, VGE= 15 V, Ta = 25°C) Trench gate and thin wafer technology High speed switching | RENESAS 瑞萨 | | ||
600 V - 25 A - IGBT High Speed Power Switching 文件：86.06 Kbytes Page：7 Pages | RENESAS 瑞萨 | |
RJH60F0DPK产品属性
- 类型
描述
- 型号
RJH60F0DPK
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
440 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
24+ |
ROHS |
990000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
1507+ |
TO-3P |
6 |
||||
RENESAS |
1507+ |
TO247 |
437 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
2517+ |
TO247 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
RENESAS/瑞萨 |
25+ |
TO247 |
32360 |
RENESAS/瑞萨全新特价RJH60F0DPK即刻询购立享优惠#长期有货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
2023+ |
TO247 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS |
23+ |
TO247 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS/瑞萨 |
23+ |
TO2473 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
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DdatasheetPDF页码索引
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