封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 50A 201.6W TO-247A 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Silicon N Channel IGBT High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tf = 90 ns typ. (at IC = 30 A, VCC = 400 V, VGE = 15 V, Rg = 5