Features

● Low collector to emitter saturation voltage

VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)

● Built in fast recovery diode in one package

● Trench gate and thin wafer technology

● High speed switching

tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)