Features

Low collector to emitter saturation voltage

VCE(sat)= 1.35 V typ. (at IC= 45 A, VGE= 15V, Ta = 25°C)

Built in fast recovery diode in one package

Trench gate and thin wafer technology

High speed switching

tf= 95 ns typ. (at IC= 30 A, Resistive Load, VCC= 300 V, VGE= 15 V, Rg = 5Ω , Ta = 25°C)