Features

• Low collector to emitter saturation voltage

VCE(sat)= 1.35 V typ. (at IC= 45 A, VGE= 15 V, Ta = 25°C)

• Built in fast recovery diode in one package

• Trench gate and thin wafer technology

• High speed switching

tf= 74 ns typ. (at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)