位置：首页 > IC中文资料第12451页 > RJH60F7ADPK
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJH60F7ADPK | Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg | RENESAS 瑞萨 |   | |
RJH60F7ADPK | Silicon N Channel IGBT High Speed Power Switching 文件：88.1 Kbytes Page：7 Pages | RENESAS 瑞萨 | | |
RJH60F7ADPK | Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages | RENESAS 瑞萨 | | |
RJH60F7ADPK | IGBTs | RENESAS 瑞萨 | | |
Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：88.1 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：88.1 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 90A 328.9W TO-3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
Silicon N Channel IGBT High Speed Power Switching 文件：88.1 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages | RENESAS 瑞萨 | |
RJH60F7ADPK产品属性
- 类型
描述
- 型号
RJH60F7ADPK
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
12048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
4250 |
原厂直销,现货供应,账期支持! |
|||
RENESAS/瑞萨 |
25+ |
TO-247 |
32360 |
RENESAS/瑞萨全新特价RJH60F7ADPK即刻询购立享优惠#长期有货 |
|||
RENESAS |
15+ |
TO247 |
25424 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
|||
Renesas(瑞萨) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
RENESAS |
24+ |
TO-3P |
3000 |
全新原装环保现货 |
|||
RENESASAS |
25+23+ |
TO-247 |
34903 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS |
2025+ |
TO-3P |
4755 |
全新原厂原装产品、公司现货销售 |
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瀚佳科技(深圳)有限公司 专业一站式全套配单服务 联系电话0755-23140719/15323480719（微信同号）
2019-1-9
DdatasheetPDF页码索引
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