Features

• Low collector to emitter saturation voltage

VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)

• Built in fast recovery diode in one package

• Trench gate and thin wafer technology

• High speed switching

tf = 80 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)