MRF2晶体三极管数据表ic资料市场行情分销商-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第2576页 > MRF2

MRF2晶体管资料

MRF207别名：MRF207三极管、MRF207晶体管、MRF207晶体三极管
MRF207生产厂家：美国摩托罗拉半导体公司
MRF207制作材料：Si-NPN
MRF207性质：甚高频（VHF）_TR
MRF207封装形式：直插封装
MRF207极限工作电压：36V
MRF207最大电流允许值：0.4A
MRF207最大工作频率：220MHZ
MRF207引脚数：3
MRF207最大耗散功率：1W
MRF207放大倍数：
MRF207图片代号：C-40
MRF207vtest：36
MRF207htest：220000000
MRF207atest：0.4
MRF207wtest：1

MRF207代换 MRF207用什么型号代替：BFR36,BLW11,3DA21A,

MRF2价格

参考价格：￥47.4438

型号：MRF206 品牌：NKK 备注：这里有MRF2多少钱，2025年最近7天走势，今日出价，今日竞价，MRF2批发/采购报价，MRF2行情走势销售排行榜，MRF2报价。

型号	功能描述	生产厂家企业	LOGO
MRF2	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	bel	bel
MRF2	TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES 文件：1.37879 Mbytes Page：4 Pages	bel	bel
MRF2.5	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	bel	bel
MRF200	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	bel	bel
MRF21010	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular	Motorola 摩托罗拉	Motorola
MRF21010LR1	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular	Motorola 摩托罗拉	Motorola
MRF21010LR1	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF21010LSR1	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular	Motorola 摩托罗拉	Motorola
MRF21010LSR1	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF21030D	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell	Motorola 摩托罗拉	Motorola
MRF21030LR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellul	Motorola 摩托罗拉	Motorola
MRF21030LR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WL	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21030LR5	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WL	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21030LSR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellul	Motorola 摩托罗拉	Motorola
MRF21030LSR3	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WL	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21030R3	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell	Motorola 摩托罗拉	Motorola
MRF21030SR3	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell	Motorola 摩托罗拉	Motorola
MRF21045	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra	Motorola 摩托罗拉	Motorola
MRF21045	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21045LR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra	Motorola 摩托罗拉	Motorola
MRF21045LR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21045LSR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular ra	Motorola 摩托罗拉	Motorola
MRF21045LSR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21060	RF Power Field Effect Transistors 2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs	Motorola 摩托罗拉	Motorola
MRF21060	RF Power Field Effect Transistors 2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21060LR3	RF Power Field Effect Transistors 2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21060LSR3	RF Power Field Effect Transistors 2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21060R3	RF Power Field Effect Transistors 2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs	Motorola 摩托罗拉	Motorola
MRF21060SR3	RF Power Field Effect Transistors 2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs	Motorola 摩托罗拉	Motorola
MRF21085	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi	Motorola 摩托罗拉	Motorola
MRF21085	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21085LR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21085LSR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi	Motorola 摩托罗拉	Motorola
MRF21085LSR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21085R3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi	Motorola 摩托罗拉	Motorola
MRF21085SR3	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi	Motorola 摩托罗拉	Motorola
MRF21090	RF Power Field Effect Transistors The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W–CDMA Performance for 214	Motorola 摩托罗拉	Motorola
MRF21090	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21090R3	RF Power Field Effect Transistors The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W–CDMA Performance for 214	Motorola 摩托罗拉	Motorola
MRF21090R3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21090R3_06	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21090SR3	RF Power Field Effect Transistors The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W–CDMA Performance for 214	Motorola 摩托罗拉	Motorola
MRF21090SR3	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF21120R6	RF Power Field Effect Transistor 2110-2170 MHz, 120 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. • W-CDM	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF227	SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The MRF227 is designed for large signal power amplifier applications operating to 225 MHz	ASI	ASI
MRF234	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF234is Designed for Large-Signal Amplifier Applications to 100 MHz. FEATURES: • Common Emitter • Omnigold™ Metalization System • PG= 9.5 dB min. at 25 W/ 90 MHz	ASI	ASI
MRF237	SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The MRF237 is designed for large signal power amplifier applications operating to 225 MHz	ASI	ASI
MRF238	NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF238is Designed for 13.6 V FM Large-Signal Amplifier Applications to 175 MHz.	ASI	ASI
MRF240A	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF240A is Designed for Class C Amplifier Applications in VHF Mobile Radios. FEATURES: • PG = 9.0 dB Min. at 40 W /160 MHz • ηC = 55 Min. at 40 W /160 MHz • Omnigold™ Metalization System	ASI	ASI
MRF247	RF POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Power Transistor The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics — Output Power = 75 Watts Power Gain = 7.0 dB Min E	Motorola 摩托罗拉	Motorola
MRF247	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF247 is Designed for 12.5 V VHF large signal amplifier applications up to 175 MHz. FEATURES: • Internal Input Matching Network • PG = 7.0 dB at 75 W/175 MHz • Omnigold™ Metalization System	ASI	ASI
MRF247	NPN Silicon RF Power Transistor The RF Line NPN Silicon RF Power Transistor The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics — Output Power = 75 Watts Power Gain = 7.0 dB Min E	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF248	NPN SILICON RF POWER TRANSISTOR	Motorola 摩托罗拉	Motorola
MRF24J40	IEEE 802.15.4??2.4 GHz RF Transceiver OVERVIEW The MRF24J40 is an IEEE 802.15.4-2003 compliant transceiver supporting MiWi™, ZigBee™ and other proprietary protocols. The MRF24J40 integrates wireless RF, PHY layer baseband and MAC layer architectures that can be combined with a simple microprocessor to apply low data rate to a multitu	Microchip 微芯科技	Microchip
MRF24J40	IEEE 802.15.4™ 2.4 GHz RF Transceiver Features: • IEEE 802.15.4™ Standard Compliant RF Transceiver • Supports ZigBee®, MiWi™, MiWi P2P and Proprietary Wireless Networking Protocols • Simple, 4-Wire Serial Peripheral Interface (SPI) • Integrated 20 MHz and 32.768 kHz Crystal Oscillator Circuitry • Low-Current Consumption: - RX	Microchip 微芯科技	Microchip
MRF24J40_V01	IEEE 802.15.4™ 2.4 GHz RF Transceiver Features: • IEEE 802.15.4™ Standard Compliant RF Transceiver • Supports ZigBee®, MiWi™, MiWi P2P and Proprietary Wireless Networking Protocols • Simple, 4-Wire Serial Peripheral Interface (SPI) • Integrated 20 MHz and 32.768 kHz Crystal Oscillator Circuitry • Low-Current Consumption: - RX	Microchip 微芯科技	Microchip
MRF24J40-I	IEEE 802.15.4??2.4 GHz RF Transceiver OVERVIEW The MRF24J40 is an IEEE 802.15.4-2003 compliant transceiver supporting MiWi™, ZigBee™ and other proprietary protocols. The MRF24J40 integrates wireless RF, PHY layer baseband and MAC layer architectures that can be combined with a simple microprocessor to apply low data rate to a multitu	Microchip 微芯科技	Microchip
MRF24J40-I/ML	IEEE 802.15.4™ 2.4 GHz RF Transceiver Features: • IEEE 802.15.4™ Standard Compliant RF Transceiver • Supports ZigBee®, MiWi™, MiWi P2P and Proprietary Wireless Networking Protocols • Simple, 4-Wire Serial Peripheral Interface (SPI) • Integrated 20 MHz and 32.768 kHz Crystal Oscillator Circuitry • Low-Current Consumption: - RX	Microchip 微芯科技	Microchip
MRF24J40-IMM	IEEE 802.15.4??2.4 GHz RF Transceiver OVERVIEW The MRF24J40 is an IEEE 802.15.4-2003 compliant transceiver supporting MiWi™, ZigBee™ and other proprietary protocols. The MRF24J40 integrates wireless RF, PHY layer baseband and MAC layer architectures that can be combined with a simple microprocessor to apply low data rate to a multitu	Microchip 微芯科技	Microchip
MRF24J40-ISLASHML	IEEE 802.15.4™ 2.4 GHz RF Transceiver Features: • IEEE 802.15.4™ Standard Compliant RF Transceiver • Supports ZigBee®, MiWi™, MiWi P2P and Proprietary Wireless Networking Protocols • Simple, 4-Wire Serial Peripheral Interface (SPI) • Integrated 20 MHz and 32.768 kHz Crystal Oscillator Circuitry • Low-Current Consumption: - RX	Microchip 微芯科技	Microchip

MRF2产品属性

类型
描述
型号
MRF2
制造商
Ferraz Shawmut

MRF2供应商更多...

更新时间：2025-11-23 22:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市富利微电子科技有限公司	MRF21045L	FREESCALE	24+	TO-63	30000	房间原装现货特价热卖,有单详谈	询价
深圳市科恒伟业电子有限公司	MRF21180	MOTOROLA/摩托罗拉	23+	TO62	6500	只做原装正品现货或订货假一赔十!	询价
深圳市科芯源微电子有限公司	MRF24WG0MA	MICORCHIP	25+	MODULE	54648	百分百原装现货实单必成欢迎询价	询价
深圳市金芯世纪电子有限公司	MRF2678DIDBTRQ1	TI/德州仪器	22+	TSSOP30	100000	代理渠道/只做原装/可含税	询价
深圳市明嘉莱科技有限公司	MRF24J40MA-I/RM	MICROCHIP/微芯	24+	Module-12	860000	明嘉莱只做原装正品现货	询价
深圳市华睿芯科技有限公司	MRF24XA-I/MQ	Microchip	24+	32QFN	10000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市冠亿通科技有限公司	MRF24J40-I/ML工控元件	MICROCHIP/微芯	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市星宇佳科技有限公司	MRF24WN0MA-I/RM100	MICROCHIP	1632+	Module-37	68		询价
芯灿微（深圳）科技有限公司	MRF24J40-I/ML	MICROCHIP/美国微芯	21+	QFN-40(6x6)	10000	全新原装现货	询价
深圳市得捷芯城科技有限公司	MRF282ZR1	Freescale(飞思卡尔)	24+	标准封装	14663	我们只是原厂的搬运工	询价

MRF2芯片相关品牌

MRF2规格书下载地址

MRF2参数引脚图相关

MRF2数据表相关新闻

MRF166W原装现货特价出
MRF166W原装现货特价出
2024-12-11
MRF448只有原装，现货，现货，现货！
MRF448只有原装，现货，现货，现货！
2024-5-21
MRF18060A
MRF18060A，全新原装现货0755-82732291当天发货或门市自取.
2020-12-7
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
2020-3-26
MRF572
MRF572，全新原装当天发货或门市自取0755-82732291.
2019-11-30
MRF571
MRF571，全新原装当天发货或门市自取0755-82732291.
2019-11-30

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

MRF2晶体管资料

MRF2价格

MRF2产品属性

MRF2供应商更多...

MRF2芯片相关品牌

MRF2规格书下载地址

MRF2参数引脚图相关

MRF2数据表相关新闻

MRF166W原装现货特价出

MRF448只有原装，现货，现货，现货！

MRF18060A

MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S

MRF572

MRF571

DdatasheetPDF页码索引