2.0 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistor

2.0 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistor

RF POWER BROADBAND NPN BIPOLAR

文件：109.9 Kbytes Page：10 Pages

RF POWER BROADBAND NPN BIPOLAR

文件：109.9 Kbytes Page：10 Pages

Fast Recovery Diode

FEATURES ■ Double Side Cooling ■ High Surge Capability ■ Low Recovery Charge APPLICATIONS ■ Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode

SCHOTTKY BARRIER RECTIFIERS 200 AMPERES 45 to 60 VOLTS

POWERTAP II SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output • Guardring for Stress Protection • Low Forward

SCHOTTKY BARRIER RECTIFIERS 200 AMPERES 45 to 60 VOLTS

POWERTAP II SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — May Be Paralleled for Higher Current Output • Guardring for Stress Protection • Low Forward