RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi

RF Power Field Effect Transistors

2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applicat

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radi

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：197.85 Kbytes Page：11 Pages

封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：197.85 Kbytes Page：11 Pages

封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频

INTEGRATED CIRCUITS

[SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs)

1-CH H.Q. Speech Controller

INTRODUCTION SNC21085 is a one-channel voice synthesizer IC with Push-Pull direct drive circuit. It built in a 4-bit tiny controller with three 4-bit I/O ports. By programming through the tiny controller in SNC21085, user’s varied applications including voice section combination, key trigger arra

1-CH H.Q. Speech Controller

INTRODUCTION SNC21085A is a one-channel voice synthesizer IC with Push-Pull direct drive circuit. It built-in a 4-bit tiny controller with three 4-bit I/O ports. By programming through the tiny controller in SNC21085A, user’s varied applications including voice section combination, key trigger ar