The RF MOSFET Line

RF Power Field Effect Transistors

N- Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

. Typical W-CDMA Performance: -45dBc ACPR, 2140 MHz, 28 Volts,

5 MHz Offset/4.096 MHz BW, 15 DTCH

Output Power — 2.1 Watts

Power Gain — 13.5 dB

Efficiency — 21

• High Gain, High Efficiency and High Linearity

• Integrated ESDProtection

• Designed for Maximum Gain and Insertion Phase Flatness

. Capable ofHandling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40|j Nominal.