RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications.

• Wideband CDMA Performance: --45 dB ACPR @ 4.096 MHz, 28 Volts

Output Power — 3.5 Watts

Power Gain — 14 dB

Efficiency — 15

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW Output Power

Features

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.