RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs

RF Power Field Effect Transistors

2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RF Power Field Effect Transistors

2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28

RF Power Field Effect Transistors

2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28

RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs

RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs

2110-2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs

RF Power Field Effect Transistors

ADSP-21060 Industrial SHARC DSP Microcomputer Family

GENERAL DESCRIPTION The ADSP-2106x SHARC®—Super Harvard Architecture Computer—is a 32-bit signal processing microcomputer that offers high levels of DSP performance. The ADSP-2106x builds on the ADSP-21000 DSP core to form a complete system-on-a-chip, adding a dual-ported on-chip SRAM and integra

ADSP-21060 Industrial SHARC DSP Microcomputer Family

GENERAL DESCRIPTION The ADSP-2106x SHARC®—Super Harvard Architecture Computer—is a 32-bit signal processing microcomputer that offers high levels of DSP performance. The ADSP-2106x builds on the ADSP-21000 DSP core to form a complete system-on-a-chip, adding a dual-ported on-chip SRAM and integra

Fast Recovery Diode

FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge. APPLICATIONS ■ Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.

ULTRA FAST RECOVERY RECTIFIERS

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