2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs

Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications.

• Typical W–CDMA Performance: 2140 MHz, 28 Volts

5 MHz Offset @ 4.096 MHz BW, 15 DTCH

Output Power — 6.0 Watts

Power Gain — 12.5 dB

Drain Efficiency — 15

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.