RF Power Field Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W–CDMA Performance for 214

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW

2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFET

RF Power Field Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W–CDMA Performance for 214

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW

RF Power Field Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W–CDMA Performance for 214

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW

Ultra Low Noise, Precision Voltage Reference

Ultra Low Noise, Precision Voltage Reference The ISL21090 is a ultra low noise, high DC accuracy precision voltage reference with wide input voltage range. The ISL21090 uses the new Intersil Advanced Bipolar technology to achieve sub 1.0µVP-P (1.25V option) 0.1Hz to 10Hz noise with an initial vol

Ultra Low Noise, Precision Voltage Reference Output Current Capability 20mA

Ultra Low Noise, Precision Voltage Reference The ISL21090 is a ultra low noise, high DC accuracy precision voltage reference with wide input voltage range. The ISL21090 uses the new Intersil Advanced Bipolar technology to achieve sub 1.0µVP-P (1.25V option) 0.1Hz to 10Hz noise with an initial vol

90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

文件：427.73 Kbytes Page：9 Pages

90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

文件：427.73 Kbytes Page：9 Pages

90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

文件：427.73 Kbytes Page：9 Pages