型号 功能描述 生产厂家 企业 LOGO 操作
MRF21010

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MOTOROLA

摩托罗拉

MRF21010

RF Power Field Effect Transistors

文件:383.37 Kbytes Page:8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF Power Field Effect Transistors

ETC

知名厂家

RF Power Field Effect Transistors

文件:383.37 Kbytes Page:8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件:383.37 Kbytes Page:8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

封装/外壳:NI-360 包装:卷带(TR) 描述:FET RF 65V 2.17GHZ NI-360 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

封装/外壳:NI-360S 包装:卷带(TR) 描述:FET RF 65V 2.17GHZ NI-360S 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

RF Power Field Effect Transistors

文件:383.37 Kbytes Page:8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

ETC

知名厂家

2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

ETC

知名厂家

INTEGRATED CIRCUITS

[SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs)

ETCList of Unclassifed Manufacturers

未分类制造商

The RF Line UMTS BAND RF LINEAR LDMOS AMPLIFIER

文件:326.37 Kbytes Page:4 Pages

MOTOROLA

摩托罗拉

UMTS Band RF Linear LDMOS Amplifier

文件:139.09 Kbytes Page:8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

ULTRA FAST RECOVERY RECTIFIERS

文件:230.67 Kbytes Page:4 Pages

MICROSEMI

美高森美

MRF21010产品属性

  • 类型

    描述

  • 型号

    MRF21010

  • 制造商

    MOTOROLA

  • 制造商全称

    Motorola, Inc

  • 功能描述

    RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

更新时间:2026-3-14 13:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
24+
TO-63
338
现货供应
Freescale
22+
NI-360S-3
20000
公司只有原装 品质保障
FREESCALE
24+
VQFN
7850
只做原装正品现货或订货假一赔十!
Freescale
20+
高频管
29516
高频管全新原装主营-可开原型号增税票
MOTOROLA
25+
TO-63
9630
我们只做原装正品现货!量大价优!
MOTOROLA/摩托罗拉
23+
TO-59
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
恩XP
25+
NI-360S
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
MOTOROLA/摩托罗拉
25+
NA
880000
明嘉莱只做原装正品现货
恩XP
23+
NI360 Short Lead
8000
只做原装现货

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