RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

RF Power Field Effect Transistors

文件：383.37 Kbytes Page：8 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

RF Power Field Effect Transistors

文件：383.37 Kbytes Page：8 Pages

RF Power Field Effect Transistors

RF Power Field Effect Transistors

文件：383.37 Kbytes Page：8 Pages

封装/外壳：NI-360 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-360 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-360S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-360S 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors

文件：383.37 Kbytes Page：8 Pages

2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Lieber Kunde,

Lieber Kunde, die Firma TESTEC Elektronik GmbH wurde 1991 von den Gesellschaftern Andreas Mann, Robert Mann und Marcus Wagener in Frankfurt am Main gegründet. Der Tätigkeitsschwerpunkt liegt in der Produktion und dem Vertrieb von Tastköpfen für Oszilloskope und Zubehör für die Messtechnik. Neb

Micropower Voltage Reference

Micropower Voltage Reference The ISL21010 is a precision, low dropout micropower bandgap voltage reference in a space-saving SOT-23 package. It operates from a single 2.2V to 5.5V supply (minimum voltage is dependent on voltage option) and provides a ±0.2 accurate reference. The ISL21010 provides

Capacitive Sensor Switch Control IC

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Micropower Voltage Reference

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Providing high-performance solutions for every link in the signal chain

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