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型号 功能描述 生产厂家 企业 LOGO 操作
MRF21010

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MOTOROLA

摩托罗拉

MRF21010

RF Power Field Effect Transistors

文件:383.37 Kbytes Page:8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

ETC

知名厂家

2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

ETC

知名厂家

RF Power Field Effect Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF Power Field Effect Transistors

文件:383.37 Kbytes Page:8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件:383.37 Kbytes Page:8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

封装/外壳:NI-360 包装:卷带(TR) 描述:FET RF 65V 2.17GHZ NI-360 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

封装/外壳:NI-360S 包装:卷带(TR) 描述:FET RF 65V 2.17GHZ NI-360S 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

RF Power Field Effect Transistors

文件:383.37 Kbytes Page:8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

INTEGRATED CIRCUITS

[SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs)

ETCList of Unclassifed Manufacturers

未分类制造商

The RF Line UMTS BAND RF LINEAR LDMOS AMPLIFIER

文件:326.37 Kbytes Page:4 Pages

MOTOROLA

摩托罗拉

UMTS Band RF Linear LDMOS Amplifier

文件:139.09 Kbytes Page:8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

ULTRA FAST RECOVERY RECTIFIERS

文件:230.67 Kbytes Page:4 Pages

MICROSEMI

美高森美

MRF21010产品属性

  • 类型

    描述

  • 型号

    MRF21010

  • 制造商

    MOTOROLA

  • 制造商全称

    Motorola, Inc

  • 功能描述

    RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

更新时间:2026-5-14 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA
26+
SOP-22
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
FREESCALE
24+
VQFN
7850
只做原装正品现货或订货假一赔十!
MOT
24+
SMD
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
MOTOROLA
23+
高频管
250
专营高频管模块,全新原装!
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
MOTOROLA/摩托罗拉
24+
TO-63
338
现货供应
MOTOROLA
24+
晶体管
265
“芯达集团”专营军工、宇航级IC原装进口现货
MOTOROLA/摩托罗拉
25+
NA
880000
明嘉莱只做原装正品现货
FREESCALE
23+
NI-360S-3
6000
专业配单保证原装正品假一罚十
原厂
2023+
模块
600
专营模块,继电器,公司原装现货

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