The RF MOSFET Line

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts,

IDQ = 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =

3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz

and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW

@ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01 Probability

on CCDF.

Output Power — 19 Watts Avg.

Power Gain — 13.6 dB

Efficiency — 23

IM3 — -37.5 dBc

ACPR — -41 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.