2110-2170 MHz, 120 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications.

• W-CDMA Performance @ -45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch

Output Power — 14 Watts (Avg.)

Power Gain — 11.5 dB

Efficiency — 16

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 120 Watts CW Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.