位置：首页 > IC中文资料第2489页 > MRF21030LR3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF21030LR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WL | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | |
MRF21030LR3 | RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellul | MOTOROLA 摩托罗拉 | | |
MRF21030LR3 | 2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET | ETC 知名厂家 | ETC | |
MRF21030LR3 | 封装/外壳：NI-400 包装：卷带（TR） 描述：FET RF 65V 2.14GHZ NI-400 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF21030LR3产品属性
- 类型
描述
- 型号
MRF21030LR3
- 功能描述
射频MOSFET电源晶体管 30W 2.2GHZ LDMOS NI400L
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
恩XP |
26+ |
NI-650H-4 |
30000 |
原装正品公司现货,假一赔十! |
|||
恩XP |
25+ |
NI-650H-4 |
12700 |
买原装认准中赛美 |
|||
Freescale |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
恩XP |
23+ |
NI-650H-4 |
8900 |
全新原装现货 |
|||
恩XP |
21+ |
NI-650H-4 |
8080 |
只做原装,质量保证 |
|||
MOTOROLA |
23+ |
高频管 |
500 |
专营高频管模块,全新原装! |
|||
FREESCA |
22+ |
N/A |
20000 |
公司只有原装 品质保障 |
|||
HIROSE/广濑 |
2608+ |
/ |
182881 |
一级代理，原装现货 |
|||
FREESCALE |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
MRF21030LR3芯片相关品牌
MRF21030LR3规格书下载地址
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