位置：首页 > IC中文资料第2489页 > MRF21010LSR1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF21010LSR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular | Motorola 摩托罗拉 |   | |
MRF21010LSR1 | RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MRF21010LSR1 | 封装/外壳：NI-360S 包装：卷带（TR） 描述：FET RF 65V 2.17GHZ NI-360S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF21010LSR1 | RF Power Field Effect Transistors 文件：383.37 Kbytes Page：8 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | |
MRF21010LSR1产品属性
- 类型
描述
- 型号
MRF21010LSR1
- 功能描述
射频MOSFET电源晶体管 10W 28V 2.1 GHZ LDMOS
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
24+ |
SMD |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
MOT |
22+ |
高频管 |
350 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
FREESCALE |
24+ |
229 |
现货供应 |
||||
Freescale |
24+ |
NI-360S |
1500 |
原装现货假一罚十 |
|||
FREESCALE |
24+ |
NA/ |
375 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
Freescale |
1039+ |
NI-360S-3 |
450 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
22+ |
NI360 Short Lead |
9000 |
原厂渠道,现货配单 |
|||
FREESCALE |
24+ |
SMD |
1680 |
FREESCALE专营品牌进口原装现货假一赔十 |
|||
FREESCALE |
23+ |
NI-360S-3 |
6000 |
专业配单保证原装正品假一罚十 |
|||
MOTOROLA |
23+ |
高频管 |
200 |
专营高频管模块,全新原装! |
MRF21010LSR1规格书下载地址
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